Effect of cerium silicate formation on the structural and electrical properties of Pt/SrBi2Ta2O9/CeO2/Si capacitors

Ho Nyung Lee; Dong Suk Shin; Yong Tae Kim; Sung Ho Choh

Effect of cerium silicate formation on the structural and electrical properties of Pt/SrBi₂Ta₂O₉/CeO₂/Si capacitors

Ho Nyung Lee, Dong Suk Shin, Yong Tae Kim, Sung Ho Choh

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi₂Ta₂O₉(SBT)/CeO₂/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO₂ thin film and SiO₂/Si substrate at 1100°C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO₂. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO₂ is 0.8 V at the same sweep voltage.

Original language	English
Pages (from-to)	543-548
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	541
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998

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title = "Effect of cerium silicate formation on the structural and electrical properties of Pt/SrBi2Ta2O9/CeO2/Si capacitors",

abstract = "We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi2Ta2O9(SBT)/CeO2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO2 thin film and SiO2/Si substrate at 1100°C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO2 is 0.8 V at the same sweep voltage.",

author = "Lee, {Ho Nyung} and Shin, {Dong Suk} and Kim, {Yong Tae} and Choh, {Sung Ho}",

year = "1999",

language = "English",

volume = "541",

pages = "543--548",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - Effect of cerium silicate formation on the structural and electrical properties of Pt/SrBi2Ta2O9/CeO2/Si capacitors

AU - Lee, Ho Nyung

AU - Shin, Dong Suk

AU - Kim, Yong Tae

AU - Choh, Sung Ho

PY - 1999

Y1 - 1999

N2 - We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi2Ta2O9(SBT)/CeO2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO2 thin film and SiO2/Si substrate at 1100°C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO2 is 0.8 V at the same sweep voltage.

AB - We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi2Ta2O9(SBT)/CeO2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO2 thin film and SiO2/Si substrate at 1100°C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO2 is 0.8 V at the same sweep voltage.

UR - http://www.scopus.com/inward/record.url?scp=0032592291&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032592291

SN - 0272-9172

VL - 541

SP - 543

EP - 548

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Effect of cerium silicate formation on the structural and electrical properties of Pt/SrBi₂Ta₂O₉/CeO₂/Si capacitors

Abstract

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