Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT

Ya Hsi Hwang; Shihyun Ahn; Chen Dong; Weidi Zhu; Byung Jae Kim; Fan Ren; Aaron G. Lind; Kevin S. Jones; Stephen J. Pearton; Ivan I. Kravchenko

doi:10.1149/06914.0111ecst

Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT

Ya Hsi Hwang, Shihyun Ahn, Chen Dong, Weidi Zhu, Byung Jae Kim, Fan Ren, Aaron G. Lind, Kevin S. Jones, Stephen J. Pearton, Ivan I. Kravchenko

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The effects of buffer oxide etchant on Ti/Al/Ni/Au Ohmic contacts for AlGaN/GaN high electron mobility transistor were studied. Scanning electron microscopy (SEM), energy dispersive spectrum (EDX), and Auger electron spectroscopy (AES) were performed to investigate the degradation after treatment. Contact resistance increase from 1×10^-4 to 2.5×10^-4 ohm/cm² after treatment. Ohmic metals were found out to be divided into three regions including islands, rings surround the islands, and the remaining field area. The islands were found to be shorter and the rings thinner after treatment. Besides, Ti, Al and Ni were found to be etched by BOE and caused Au to peel off from the Ohmic metals. The etching of Ti, Al and Ni was believed to be the reason of degradation.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
Editors	J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, J. K. Hite
Publisher	Electrochemical Society Inc.
Pages	111-118
Number of pages	8
Edition	14
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06914.0111ecst
State	Published - 2015
Event	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	14
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

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Hwang, Y. H., Ahn, S., Dong, C., Zhu, W., Kim, B. J., Ren, F., Lind, A. G., Jones, K. S., Pearton, S. J., & Kravchenko, I. I. (2015). Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT. In J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, & J. K. Hite (Eds.), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58 (14 ed., pp. 111-118). (ECS Transactions; Vol. 69, No. 14). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0111ecst

Hwang, Ya Hsi ; Ahn, Shihyun ; Dong, Chen et al. / Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT. State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. editor / J. H. He ; C. O'Dwyer ; F. Ren ; E. Douglas ; C. Jagadish ; S. Jang ; Y. L. Wang ; R. P. Lynch ; T. J. Anderson ; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. pp. 111-118 (ECS Transactions; 14).

@inproceedings{1459f7f1df1f48b5b431a05d7a35e972,

title = "Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT",

abstract = "The effects of buffer oxide etchant on Ti/Al/Ni/Au Ohmic contacts for AlGaN/GaN high electron mobility transistor were studied. Scanning electron microscopy (SEM), energy dispersive spectrum (EDX), and Auger electron spectroscopy (AES) were performed to investigate the degradation after treatment. Contact resistance increase from 1×10-4 to 2.5×10-4 ohm/cm2 after treatment. Ohmic metals were found out to be divided into three regions including islands, rings surround the islands, and the remaining field area. The islands were found to be shorter and the rings thinner after treatment. Besides, Ti, Al and Ni were found to be etched by BOE and caused Au to peel off from the Ohmic metals. The etching of Ti, Al and Ni was believed to be the reason of degradation.",

author = "Hwang, {Ya Hsi} and Shihyun Ahn and Chen Dong and Weidi Zhu and Kim, {Byung Jae} and Fan Ren and Lind, {Aaron G.} and Jones, {Kevin S.} and Pearton, {Stephen J.} and Kravchenko, {Ivan I.}",

note = "Publisher Copyright: {\textcopyright} 2015 The Electrochemical Society.; Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",

year = "2015",

doi = "10.1149/06914.0111ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "14",

pages = "111--118",

editor = "He, {J. H.} and C. O'Dwyer and F. Ren and E. Douglas and C. Jagadish and S. Jang and Wang, {Y. L.} and Lynch, {R. P.} and Anderson, {T. J.} and Hite, {J. K.}",

booktitle = "State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58",

edition = "14",

}

Hwang, YH, Ahn, S, Dong, C, Zhu, W, Kim, BJ, Ren, F, Lind, AG, Jones, KS, Pearton, SJ & Kravchenko, II 2015, Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT. in JH He, C O'Dwyer, F Ren, E Douglas, C Jagadish, S Jang, YL Wang, RP Lynch, TJ Anderson & JK Hite (eds), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 edn, ECS Transactions, no. 14, vol. 69, Electrochemical Society Inc., pp. 111-118, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0111ecst

Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT. / Hwang, Ya Hsi; Ahn, Shihyun; Dong, Chen et al.
State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. ed. / J. H. He; C. O'Dwyer; F. Ren; E. Douglas; C. Jagadish; S. Jang; Y. L. Wang; R. P. Lynch; T. J. Anderson; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. p. 111-118 (ECS Transactions; Vol. 69, No. 14).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT

AU - Hwang, Ya Hsi

AU - Ahn, Shihyun

AU - Dong, Chen

AU - Zhu, Weidi

AU - Kim, Byung Jae

AU - Ren, Fan

AU - Lind, Aaron G.

AU - Jones, Kevin S.

AU - Pearton, Stephen J.

AU - Kravchenko, Ivan I.

PY - 2015

Y1 - 2015

N2 - The effects of buffer oxide etchant on Ti/Al/Ni/Au Ohmic contacts for AlGaN/GaN high electron mobility transistor were studied. Scanning electron microscopy (SEM), energy dispersive spectrum (EDX), and Auger electron spectroscopy (AES) were performed to investigate the degradation after treatment. Contact resistance increase from 1×10-4 to 2.5×10-4 ohm/cm2 after treatment. Ohmic metals were found out to be divided into three regions including islands, rings surround the islands, and the remaining field area. The islands were found to be shorter and the rings thinner after treatment. Besides, Ti, Al and Ni were found to be etched by BOE and caused Au to peel off from the Ohmic metals. The etching of Ti, Al and Ni was believed to be the reason of degradation.

AB - The effects of buffer oxide etchant on Ti/Al/Ni/Au Ohmic contacts for AlGaN/GaN high electron mobility transistor were studied. Scanning electron microscopy (SEM), energy dispersive spectrum (EDX), and Auger electron spectroscopy (AES) were performed to investigate the degradation after treatment. Contact resistance increase from 1×10-4 to 2.5×10-4 ohm/cm2 after treatment. Ohmic metals were found out to be divided into three regions including islands, rings surround the islands, and the remaining field area. The islands were found to be shorter and the rings thinner after treatment. Besides, Ti, Al and Ni were found to be etched by BOE and caused Au to peel off from the Ohmic metals. The etching of Ti, Al and Ni was believed to be the reason of degradation.

UR - http://www.scopus.com/inward/record.url?scp=84945906722&partnerID=8YFLogxK

U2 - 10.1149/06914.0111ecst

DO - 10.1149/06914.0111ecst

M3 - Conference contribution

AN - SCOPUS:84945906722

T3 - ECS Transactions

SP - 111

EP - 118

BT - State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58

A2 - He, J. H.

A2 - O'Dwyer, C.

A2 - Ren, F.

A2 - Douglas, E.

A2 - Jagadish, C.

A2 - Jang, S.

A2 - Wang, Y. L.

A2 - Lynch, R. P.

A2 - Anderson, T. J.

A2 - Hite, J. K.

PB - Electrochemical Society Inc.

T2 - Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting

Y2 - 11 October 2015 through 15 October 2015

ER -

Hwang YH, Ahn S, Dong C, Zhu W, Kim BJ, Ren F et al. Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT. In He JH, O'Dwyer C, Ren F, Douglas E, Jagadish C, Jang S, Wang YL, Lynch RP, Anderson TJ, Hite JK, editors, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 ed. Electrochemical Society Inc. 2015. p. 111-118. (ECS Transactions; 14). doi: 10.1149/06914.0111ecst

Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT

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