Effect of γ-irradiation on non-linear I-V behaviour and thermoelectric measurements in amorphous semiconducting AsSeTe system

An amorphous semiconducting compound of the composition As₂SeTe₂ is studied for its non-linear current-voltage characteristics, conductivity and thermoelectric measurements. It has been observed that γ-irradiation of the sample gives a lower threshold voltage and greater thermoelectric power. The threshold voltage shifts to a lower voltage value for the irradiated sample. The non-linear I-V behaviour and p-type nature of unirradiated and γ-irradiated As₂SeTe₂ are discussed on the basis of charged defect states existing and also created after γ-irradiation in the material. The thermoelectric power for unirradiated and γ-irradiated As₂SeTe₂ is discussed on the basis of a quantity, related to conductivity and thermoelectric power which explains to a great extent the effect observed experimentally.