Dynamics of impurity and valence bands in Ga1-x Mnx As within the dynamical mean-field approximation

M. A. Majidi, J. Moreno, M. Jarrell, R. S. Fishman, K. Aryanpour

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We calculate the density-of-states and the spectral function of Ga1-x Mnx As within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3 2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasiparticle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling Jc at a Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

Original languageEnglish
Article number115205
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number11
DOIs
StatePublished - 2006

Funding

FundersFunder number
National Science Foundation0312680, 0073308

    Fingerprint

    Dive into the research topics of 'Dynamics of impurity and valence bands in Ga1-x Mnx As within the dynamical mean-field approximation'. Together they form a unique fingerprint.

    Cite this