Dynamic Stabilization of Metastable States in Triple-Well Ferroelectric Sn2P2S6

Sabine M. Neumayer, Nora Bauer, Sergey Basun, Benjamin S. Conner, Michael A. Susner, Maxim O. Lavrentovich, Petro Maksymovych

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Polarization dynamics in ferroelectric materials is governed by the effective potential energy landscape of the order parameter. The unique aspect of ferroelectrics compared to many other transitions is the possibility of more than two potential wells, leading to complicated energy landscapes with new fundamental and functional properties. Here, direct dynamic evidence is revealed of a triple-well potential in the metal thiophosphate Sn2P2S6 compound using multivariate scanning probe microscopy combined with theoretical simulations. The key finding is that the metastable zero polarization state can be accessed through a gradual switching process and is stabilized over a broad range of electric fields. Simulations confirm that the observed zero polarization state originates from a kinetic stabilization of the nonpolar state of the triple-well, as opposed to domain walls. Dynamically, the triple-well of Sn2P2S6 becomes equivalent to antiferroelectric hysteresis loops. Therefore, this material combines the robust and well-defined domain structure of a proper ferroelectric with dynamic hysteresis loops present in antiferroelectrics. Moreover, the triple-well enhances mem-capacitive effects in Sn2P2S6, which are forbidden for ideal double-well ferroelectrics. These findings provide a path to tunable electronic elements for beyond binary high-density computing devices and neuromorphic circuits based on dynamic properties of the triple-well.

Original languageEnglish
Article number2211194
JournalAdvanced Materials
Volume35
Issue number20
DOIs
StatePublished - May 18 2023

Funding

The scanning probe microscopy experiments and analysis were supported by the Center for Nanophase Material Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. Analysis and manuscript writing were supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. Crystal growth was performed under Air Force Office of Scientific Research (AFOSR) grant LRIR 23RXCOR003 and AOARD-MOST Grant Number F4GGA21207H002. The scanning probe microscopy experiments and analysis were supported by the Center for Nanophase Material Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. Analysis and manuscript writing were supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. Crystal growth was performed under Air Force Office of Scientific Research (AFOSR) grant LRIR 23RXCOR003 and AOARD‐MOST Grant Number F4GGA21207H002.

Keywords

  • Sn P S
  • ferroelectrics
  • mem-capacitance
  • neuromorphic
  • piezoresponse force microscopy
  • scanning microwave impedance microscopy
  • triple-well

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