Dual quantum spin Hall insulator by density-tuned correlations in TaIrTe4

  • Jian Tang
  • , Thomas Siyuan Ding
  • , Hongyu Chen
  • , Anyuan Gao
  • , Tiema Qian
  • , Zumeng Huang
  • , Zhe Sun
  • , Xin Han
  • , Alex Strasser
  • , Jiangxu Li
  • , Michael Geiwitz
  • , Mohamed Shehabeldin
  • , Vsevolod Belosevich
  • , Zihan Wang
  • , Yiping Wang
  • , Kenji Watanabe
  • , Takashi Taniguchi
  • , David C. Bell
  • , Ziqiang Wang
  • , Liang Fu
  • Yang Zhang, Xiaofeng Qian, Kenneth S. Burch, Youguo Shi, Ni Ni, Guoqing Chang, Su Yang Xu, Qiong Ma

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

A study reports a dual quantum spin Hall insulator in monolayer TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations.

Original languageEnglish
Pages (from-to)515-521
Number of pages7
JournalNature
Volume628
Issue number8008
DOIs
StatePublished - Apr 18 2024

Funding

We thank J. Cano, V. Fatemi, R. Fernando, L. Liu, H. Lu, X.-B. Qiang, Y. Ran, B. Skinner, A. Uri, I. Zeljkovic, F. Zhang and Y. Zhang for fruitful discussions. Q.M. acknowledges support from the Air Force Office of Scientific Research grant FA9550-22-1-0270 (transport measurements and data analysis). Q.M. and S.-Y.X. acknowledge support from the Center for the Advancement of Topological Semimetals, an Energy Frontier Research Center funded by the US Department of Energy Office of Science, through the Ames Laboratory under contract DEAC02-07CH11358 (device fabrication). Q.M. also acknowledges support from the National Science Foundation (NSF) CAREER award DMR-2143426 (manuscript writing), the Canadian Institute for Advanced Research (CIFAR) Azrieli Global Scholar Program and the Alfred P. Sloan Foundation. G.C. acknowledges support from the National Research Foundation, Singapore under its Fellowship Award (NRF-NRFF13-2021-0010) and the Nanyang Assistant Professorship grant. N.N. acknowledges support from the US Department of Energy, Office of Science, under award number DE-SC0021117 (single-crystal growth and characterization of TaIrTe). Y.S. acknowledges support from the Strategic Priority Research Program of the Chinese Academy of Sciences (grant number XDB33030000) and the Informatization Plan of the Chinese Academy of Sciences (CAS-WX2021SF-0102). K.S.B. and Y.W. acknowledge support from the Air Force Office of Scientific Research under award number FA9550-20-1-0246. X.Q. acknowledges support from the NSF under award number DMR-1753054 and from the donors of the American Chemical Society Petroleum Research Fund under grant number 65502-ND10. D.C.B. acknowledges support from the Harvard University Center for Nanoscale Systems, a member of the National Nanotechnology Coordinated Infrastructure Network, under NSF award number ECCS-2025158, and the STC Center for Integrated Quantum Materials, NSF grant number DMR-1231319. Z.S. acknowledges support from Swiss National Science Foundation under grant number P500PT-206914. M.G. acknowledges the support of the NSF Electronics, Photonics and Magnetic Devices programme through grant 2211334. A.S. acknowledges support from DMR-2103842. Portions of this research were conducted with the advanced computing resources provided by Texas A&M High Performance Research Computing. J.L. and Y.Z. are partly supported by the NSF Materials Research Science and Engineering Center programme through the UT Knoxville Center for Advanced Materials and Manufacturing (grant number DMR-2309083). L.F. and Q.M. acknowledge support from the National Science Foundation Convergence Program under grant number ITE-2235945. Ziqiang Wang is supported by the US Department of Energy, Basic Energy Sciences grant number DE-FG02-99ER45747. K.W. and T.T. acknowledge support from the Japan Society for the Promotion of Science KAKENHI (grant numbers 21H05233 and 23H02052) and World Premier International Research Center Initiative, MEXT, Japan. We also acknowledge that some of the work was carried out in the Boston College cleanroom and nanotechnology facilities. 4

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