TY - GEN
T1 - Dual harmonic Kelvin probe force microscopy for surface potential measurements of ferroelectrics
AU - Collins, L.
AU - Kilpatrick, J. I.
AU - Bhaskaran, M.
AU - Sriram, S.
AU - Weber, S. A.L.
AU - Jarvis, S. P.
AU - Rodriguez, B. J.
PY - 2012
Y1 - 2012
N2 - In this work, we implemented dual harmonic Kelvin probe force microscopy (DH-KPFM) for surface potential mapping of ferroelectric thin films, namely bismuth ferrite (BFO) and strontium barium niobate (SBN). We applied DH and conventional KPFM to charge-patterned BFO and found agreement between recorded relative surface potential values between domains, demonstrating that DH-KPFM can be used for quantitative mapping of relative surface potentials. We used piezoresponse force microscopy (PFM) to determine whether polarization switching had occurred. From the PFM data, we found that BFO was poled successfully, and that the measured surface potential was consistent with the sign of the bound polarization charge. For SBN, a thin surface layer was evident in the topography after the application of DC bias, suggesting an electrochemical reaction had taken place between the tip and the sample. We used DH-KPFM to simultaneously map the surface potential and changes in the dielectric properties resulting from this surface layer. The results presented herein demonstrate that DH-KPFM can be used for electric characterization of voltage-sensitive materials, and we anticipate that DH-KFPM will become a useful tool for non-intrusive electrical characterization of materials.
AB - In this work, we implemented dual harmonic Kelvin probe force microscopy (DH-KPFM) for surface potential mapping of ferroelectric thin films, namely bismuth ferrite (BFO) and strontium barium niobate (SBN). We applied DH and conventional KPFM to charge-patterned BFO and found agreement between recorded relative surface potential values between domains, demonstrating that DH-KPFM can be used for quantitative mapping of relative surface potentials. We used piezoresponse force microscopy (PFM) to determine whether polarization switching had occurred. From the PFM data, we found that BFO was poled successfully, and that the measured surface potential was consistent with the sign of the bound polarization charge. For SBN, a thin surface layer was evident in the topography after the application of DC bias, suggesting an electrochemical reaction had taken place between the tip and the sample. We used DH-KPFM to simultaneously map the surface potential and changes in the dielectric properties resulting from this surface layer. The results presented herein demonstrate that DH-KPFM can be used for electric characterization of voltage-sensitive materials, and we anticipate that DH-KFPM will become a useful tool for non-intrusive electrical characterization of materials.
KW - Kelvin probe force microscopy
KW - capacitance mapping
KW - dual harmonic Kelvin probe force microscopy
KW - ferroelectric materials
KW - piezoresponse force microscopy
KW - surface potential mapping
UR - http://www.scopus.com/inward/record.url?scp=84867905106&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2012.6297845
DO - 10.1109/ISAF.2012.6297845
M3 - Conference contribution
AN - SCOPUS:84867905106
SN - 9781467326681
T3 - Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012
BT - Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012
T2 - 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM
Y2 - 9 July 2012 through 13 July 2012
ER -