TY - JOUR
T1 - Dry etching of InP material based on inductivity coupled plasma
AU - Wang, Qi
AU - Zhang, Jin Long
AU - Wang, Li Jun
AU - Liu, Yun
PY - 2011/12
Y1 - 2011/12
N2 - Dry etching of InP material based on inductivity coupled plasma(ICP) was thoroughly studied, Cl 2/Ar/H 2 gas mixture was adopted, and the etching depth could reach 10 μm with a vertical and a smooth surface. The gas percentages of the total gas versus etching rate, and the applicable regions of Ni, SiO 2, and the combination of Ni and SiO 2 were studied, respectively. The regions of the effective etching rate and selectivity against Ni are 450~1200 nm/min and 175~190, respectively. The choosing and fabrication approaches adopted are highly suitable for any semiconductor material based on ICP system.
AB - Dry etching of InP material based on inductivity coupled plasma(ICP) was thoroughly studied, Cl 2/Ar/H 2 gas mixture was adopted, and the etching depth could reach 10 μm with a vertical and a smooth surface. The gas percentages of the total gas versus etching rate, and the applicable regions of Ni, SiO 2, and the combination of Ni and SiO 2 were studied, respectively. The regions of the effective etching rate and selectivity against Ni are 450~1200 nm/min and 175~190, respectively. The choosing and fabrication approaches adopted are highly suitable for any semiconductor material based on ICP system.
KW - Dry etching
KW - Hard mask
KW - InP
KW - Inductivity coupled plasma
UR - https://www.scopus.com/pages/publications/84862951450
U2 - 10.3788/fgxb20113212.1276
DO - 10.3788/fgxb20113212.1276
M3 - Article
AN - SCOPUS:84862951450
SN - 1000-7032
VL - 32
SP - 1276
EP - 1280
JO - Faguang Xuebao/Chinese Journal of Luminescence
JF - Faguang Xuebao/Chinese Journal of Luminescence
IS - 12
ER -