Abstract
Dry etching of InP material based on inductivity coupled plasma(ICP) was thoroughly studied, Cl 2/Ar/H 2 gas mixture was adopted, and the etching depth could reach 10 μm with a vertical and a smooth surface. The gas percentages of the total gas versus etching rate, and the applicable regions of Ni, SiO 2, and the combination of Ni and SiO 2 were studied, respectively. The regions of the effective etching rate and selectivity against Ni are 450~1200 nm/min and 175~190, respectively. The choosing and fabrication approaches adopted are highly suitable for any semiconductor material based on ICP system.
| Original language | English |
|---|---|
| Pages (from-to) | 1276-1280 |
| Number of pages | 5 |
| Journal | Faguang Xuebao/Chinese Journal of Luminescence |
| Volume | 32 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2011 |
| Externally published | Yes |
Keywords
- Dry etching
- Hard mask
- InP
- Inductivity coupled plasma
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