Doping of GaN grown on silicon via ion implantation

Frederic Mazen; Marianne Coig; Aurelien Lardeau-Falcy; Lynda Amichi; Marc Veillerot; C. Licitra; Adeline Grenier; Jerome Biscarrat; Joel Kanyandekwe; Matthew Charles; Frederic Milesi

doi:10.23919/IWJT.2019.8802889

Doping of GaN grown on silicon via ion implantation

Frederic Mazen, Marianne Coig, Aurelien Lardeau-Falcy, Lynda Amichi, Marc Veillerot, C. Licitra, Adeline Grenier, Jerome Biscarrat, Joel Kanyandekwe, Matthew Charles, Frederic Milesi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Since the last decade, power electronics is moving towards higher frequency and higher voltage applications. For this purpose, the use of silicon (Si) presents some limitations and new materials like Silicon Carbide (SiC) or more recently Gallium Nitride (GaN) have boomed. Because of its large bandgap and high breakdown voltage, GaN is a good candidate for high power device applications, as well as Radio Frequency (RF).

Original language	English
Title of host publication	19th International Workshop on Junction Technology, IWJT 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863487277
DOIs	https://doi.org/10.23919/IWJT.2019.8802889
State	Published - Jun 2019
Externally published	Yes
Event	19th International Workshop on Junction Technology, IWJT 2019 - Kyoto, Japan Duration: Jun 6 2019 → Jun 7 2019

Publication series

Name	19th International Workshop on Junction Technology, IWJT 2019

Conference

Conference	19th International Workshop on Junction Technology, IWJT 2019
Country/Territory	Japan
City	Kyoto
Period	06/6/19 → 06/7/19

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10.23919/IWJT.2019.8802889

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Mazen, F., Coig, M., Lardeau-Falcy, A., Amichi, L., Veillerot, M., Licitra, C., Grenier, A., Biscarrat, J., Kanyandekwe, J., Charles, M., & Milesi, F. (2019). Doping of GaN grown on silicon via ion implantation. In 19th International Workshop on Junction Technology, IWJT 2019 Article 8802889 (19th International Workshop on Junction Technology, IWJT 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2019.8802889

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title = "Doping of GaN grown on silicon via ion implantation",

abstract = "Since the last decade, power electronics is moving towards higher frequency and higher voltage applications. For this purpose, the use of silicon (Si) presents some limitations and new materials like Silicon Carbide (SiC) or more recently Gallium Nitride (GaN) have boomed. Because of its large bandgap and high breakdown voltage, GaN is a good candidate for high power device applications, as well as Radio Frequency (RF).",

author = "Frederic Mazen and Marianne Coig and Aurelien Lardeau-Falcy and Lynda Amichi and Marc Veillerot and C. Licitra and Adeline Grenier and Jerome Biscarrat and Joel Kanyandekwe and Matthew Charles and Frederic Milesi",

note = "Publisher Copyright: {\textcopyright} 2019 JSAP.; 19th International Workshop on Junction Technology, IWJT 2019 ; Conference date: 06-06-2019 Through 07-06-2019",

year = "2019",

month = jun,

doi = "10.23919/IWJT.2019.8802889",

language = "English",

series = "19th International Workshop on Junction Technology, IWJT 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "19th International Workshop on Junction Technology, IWJT 2019",

}

Mazen, F, Coig, M, Lardeau-Falcy, A, Amichi, L, Veillerot, M, Licitra, C, Grenier, A, Biscarrat, J, Kanyandekwe, J, Charles, M & Milesi, F 2019, Doping of GaN grown on silicon via ion implantation. in 19th International Workshop on Junction Technology, IWJT 2019., 8802889, 19th International Workshop on Junction Technology, IWJT 2019, Institute of Electrical and Electronics Engineers Inc., 19th International Workshop on Junction Technology, IWJT 2019, Kyoto, Japan, 06/6/19. https://doi.org/10.23919/IWJT.2019.8802889

Doping of GaN grown on silicon via ion implantation. / Mazen, Frederic; Coig, Marianne; Lardeau-Falcy, Aurelien et al.
19th International Workshop on Junction Technology, IWJT 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8802889 (19th International Workshop on Junction Technology, IWJT 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Doping of GaN grown on silicon via ion implantation

AU - Mazen, Frederic

AU - Coig, Marianne

AU - Lardeau-Falcy, Aurelien

AU - Amichi, Lynda

AU - Veillerot, Marc

AU - Licitra, C.

AU - Grenier, Adeline

AU - Biscarrat, Jerome

AU - Kanyandekwe, Joel

AU - Charles, Matthew

AU - Milesi, Frederic

PY - 2019/6

Y1 - 2019/6

N2 - Since the last decade, power electronics is moving towards higher frequency and higher voltage applications. For this purpose, the use of silicon (Si) presents some limitations and new materials like Silicon Carbide (SiC) or more recently Gallium Nitride (GaN) have boomed. Because of its large bandgap and high breakdown voltage, GaN is a good candidate for high power device applications, as well as Radio Frequency (RF).

AB - Since the last decade, power electronics is moving towards higher frequency and higher voltage applications. For this purpose, the use of silicon (Si) presents some limitations and new materials like Silicon Carbide (SiC) or more recently Gallium Nitride (GaN) have boomed. Because of its large bandgap and high breakdown voltage, GaN is a good candidate for high power device applications, as well as Radio Frequency (RF).

UR - http://www.scopus.com/inward/record.url?scp=85072071194&partnerID=8YFLogxK

U2 - 10.23919/IWJT.2019.8802889

DO - 10.23919/IWJT.2019.8802889

M3 - Conference contribution

AN - SCOPUS:85072071194

T3 - 19th International Workshop on Junction Technology, IWJT 2019

BT - 19th International Workshop on Junction Technology, IWJT 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 19th International Workshop on Junction Technology, IWJT 2019

Y2 - 6 June 2019 through 7 June 2019

ER -

Doping of GaN grown on silicon via ion implantation

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