Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy

Z. Y. Zhao, W. M. Zhang, C. Yi, A. D. Stiff-Roberts, B. J. Rodriguez, A. P. Baddorf

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Cross-section of multi-layer InAs/GaAs quantum dot heterostructure has been characterized using scanning capacitance microscopy to investigate dopant incorporation into quantum dots. Simulation of the corresponding band structure is used to better understand the experimental results.

Original languageEnglish
Title of host publicationLEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings
Pages32-33
Number of pages2
DOIs
StatePublished - 2007
Event20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Lake Buena Vista, FL, United States
Duration: Oct 21 2007Oct 25 2007

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Conference

Conference20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
Country/TerritoryUnited States
CityLake Buena Vista, FL
Period10/21/0710/25/07

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