Abstract
In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy (SCM) has been used to investigate carrier occupation/distribution in a multilayer InAsGaAs quantum dot (QD) heterostructure for different doping techniques. The doping schemes in the QD structure include direct doping (in InAs QD layers) and remote doping (in GaAs barrier layers), each with different doping concentrations. The SCM image suggests that large band bending occurs due to highly doped, remote-doping layers, thereby causing electron redistribution in direct-doping layers. The experimental result is supported by a band structure calculation using the Schrödinger-Poisson method by NEXTNANO3.
| Original language | English |
|---|---|
| Article number | 092101 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2008 |
Funding
The authors would like to thank the NEXTNANO3 development team at the Walter Schottky Institute for providing the simulation package and some technical support. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Division of Scientific User Facilities, U.S. Department of Energy. This work is supported, in part, by the Air Force Office of Scientific Research under Grant No. FA9550-06-1-0482 and the National Science Foundation under Grant No. 0547273.
| Funders | Funder number |
|---|---|
| Division of Scientific User Facilities | |
| National Science Foundation | 0547273 |
| U.S. Department of Energy | |
| Air Force Office of Scientific Research | FA9550-06-1-0482 |
| Oak Ridge National Laboratory |