TY - JOUR
T1 - Dopant transport during semiconductor crystal growth in space with a steady magnetic field
AU - Hockenhull, T. K.
AU - Ma, N.
N1 - Publisher Copyright:
© Institute of Physics, University of Latvia.
PY - 2000
Y1 - 2000
N2 - This paper presents a transient model for tfopant segregation during semiconductor crystal growth in space With a steady transverse residual acceleration and with a steady magnetic field. Crystals are being gttnvn in the presence of magnetic fields in space in an attempt to eliminate buoyant convection. Unfortunately, magnetically damped buoyant convection created by a residual acceleration in space is large enough to drive convectivc mass transport, which produces non-Uniformities in the concentration in both the melt and the crystal.
AB - This paper presents a transient model for tfopant segregation during semiconductor crystal growth in space With a steady transverse residual acceleration and with a steady magnetic field. Crystals are being gttnvn in the presence of magnetic fields in space in an attempt to eliminate buoyant convection. Unfortunately, magnetically damped buoyant convection created by a residual acceleration in space is large enough to drive convectivc mass transport, which produces non-Uniformities in the concentration in both the melt and the crystal.
UR - http://www.scopus.com/inward/record.url?scp=85044657820&partnerID=8YFLogxK
U2 - 10.1023/a:1004814208035
DO - 10.1023/a:1004814208035
M3 - Article
AN - SCOPUS:85044657820
SN - 0024-998X
VL - 36
SP - 234
EP - 239
JO - Magnetohydrodynamics
JF - Magnetohydrodynamics
IS - 3
ER -
