Dopant transport during semiconductor crystal growth in space with a steady magnetic field

T. K. Hockenhull, N. Ma

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a transient model for tfopant segregation during semiconductor crystal growth in space With a steady transverse residual acceleration and with a steady magnetic field. Crystals are being gttnvn in the presence of magnetic fields in space in an attempt to eliminate buoyant convection. Unfortunately, magnetically damped buoyant convection created by a residual acceleration in space is large enough to drive convectivc mass transport, which produces non-Uniformities in the concentration in both the melt and the crystal.

Original languageEnglish
Pages (from-to)234-239
Number of pages6
JournalMagnetohydrodynamics
Volume36
Issue number3
DOIs
StatePublished - 2000
Externally publishedYes

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