Dopant segregation during liquid-encapsulated Czochralski crystal growth in a steady axial magnetic field

Joseph L. Morton; Nancy Ma; David F. Bliss; George G. Bryant

doi:10.1016/S0022-0248(02)01425-2

Dopant segregation during liquid-encapsulated Czochralski crystal growth in a steady axial magnetic field

Joseph L. Morton, Nancy Ma, David F. Bliss, George G. Bryant

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

During the magnetically stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal such as indium-phosphide (InP) or gallium-antimonide (GaSb) is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper presents a model for the unsteady transport of a dopant during the MLEC process with a steady axial magnetic field. The convective species transport during growth is driven by the melt motion, which produces segregation, i.e. non-uniformities in the dopant concentration, in both the melt and the crystal. This convective transport is significant even for a magnetic field strength of 2 T. Except for the last-solidified part of the crystal, the crystal's axial dopant homogeneity, i.e. uniformity in the dopant concentration, improves as the magnetic field strength is decreased. Dopant distributions in the crystal and in the melt at several different stages during growth are presented for several magnetic field strengths.

Original language	English
Pages (from-to)	471-485
Number of pages	15
Journal	Journal of Crystal Growth
Volume	242
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(02)01425-2
State	Published - Jul 2002
Externally published	Yes

Funding

This research was supported by the National Aeronautics and Space Administration under Grant NAG8-1817, and by the US Air Force Office of Scientific Research. The calculations were performed on the IBM SP at the North Carolina Supercomputing Center in Research Triangle Park, NC. The authors are grateful to Professor J.S. Walker in the Department of Mechanical and Industrial Engineering at the University of Illinois at Urbana-Champaign for his thoughtful and constructive suggestions.

Funders	Funder number
National Aeronautics and Space Administration	NAG8-1817
Air Force Office of Scientific Research

Keywords

A1. Magnetic fields
A1. Mass transfer
A1. Segregation
A2. Growth from melt
A2. Liquid-encapsulated Czochralski method
A2. Magnetic field assisted Czochralski method
B2. Semiconducting III-V compounds

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10.1016/S0022-0248(02)01425-2

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title = "Dopant segregation during liquid-encapsulated Czochralski crystal growth in a steady axial magnetic field",

abstract = "During the magnetically stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal such as indium-phosphide (InP) or gallium-antimonide (GaSb) is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper presents a model for the unsteady transport of a dopant during the MLEC process with a steady axial magnetic field. The convective species transport during growth is driven by the melt motion, which produces segregation, i.e. non-uniformities in the dopant concentration, in both the melt and the crystal. This convective transport is significant even for a magnetic field strength of 2 T. Except for the last-solidified part of the crystal, the crystal's axial dopant homogeneity, i.e. uniformity in the dopant concentration, improves as the magnetic field strength is decreased. Dopant distributions in the crystal and in the melt at several different stages during growth are presented for several magnetic field strengths.",

keywords = "A1. Magnetic fields, A1. Mass transfer, A1. Segregation, A2. Growth from melt, A2. Liquid-encapsulated Czochralski method, A2. Magnetic field assisted Czochralski method, B2. Semiconducting III-V compounds",

author = "Morton, {Joseph L.} and Nancy Ma and Bliss, {David F.} and Bryant, {George G.}",

year = "2002",

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doi = "10.1016/S0022-0248(02)01425-2",

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T1 - Dopant segregation during liquid-encapsulated Czochralski crystal growth in a steady axial magnetic field

AU - Morton, Joseph L.

AU - Ma, Nancy

AU - Bliss, David F.

AU - Bryant, George G.

PY - 2002/7

Y1 - 2002/7

N2 - During the magnetically stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal such as indium-phosphide (InP) or gallium-antimonide (GaSb) is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper presents a model for the unsteady transport of a dopant during the MLEC process with a steady axial magnetic field. The convective species transport during growth is driven by the melt motion, which produces segregation, i.e. non-uniformities in the dopant concentration, in both the melt and the crystal. This convective transport is significant even for a magnetic field strength of 2 T. Except for the last-solidified part of the crystal, the crystal's axial dopant homogeneity, i.e. uniformity in the dopant concentration, improves as the magnetic field strength is decreased. Dopant distributions in the crystal and in the melt at several different stages during growth are presented for several magnetic field strengths.

AB - During the magnetically stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal such as indium-phosphide (InP) or gallium-antimonide (GaSb) is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper presents a model for the unsteady transport of a dopant during the MLEC process with a steady axial magnetic field. The convective species transport during growth is driven by the melt motion, which produces segregation, i.e. non-uniformities in the dopant concentration, in both the melt and the crystal. This convective transport is significant even for a magnetic field strength of 2 T. Except for the last-solidified part of the crystal, the crystal's axial dopant homogeneity, i.e. uniformity in the dopant concentration, improves as the magnetic field strength is decreased. Dopant distributions in the crystal and in the melt at several different stages during growth are presented for several magnetic field strengths.

KW - A1. Magnetic fields

KW - A1. Mass transfer

KW - A1. Segregation

KW - A2. Growth from melt

KW - A2. Liquid-encapsulated Czochralski method

KW - A2. Magnetic field assisted Czochralski method

KW - B2. Semiconducting III-V compounds

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SN - 0022-0248

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JF - Journal of Crystal Growth

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ER -

Dopant segregation during liquid-encapsulated Czochralski crystal growth in a steady axial magnetic field

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