Dopant segregation and giant magnetoresistance in manganese-doped germanium

A. P. Li; C. Zeng; K. Van Benthem; M. F. Chisholm; J. Shen; S. V.S. Nageswara Rao; S. K. Dixit; L. C. Feldman; A. G. Petukhov; M. Foygel; H. H. Weitering

doi:10.1103/PhysRevB.75.201201

Dopant segregation and giant magnetoresistance in manganese-doped germanium

A. P. Li, C. Zeng, K. Van Benthem, M. F. Chisholm, J. Shen, S. V.S. Nageswara Rao, S. K. Dixit, L. C. Feldman, A. G. Petukhov, M. Foygel, H. H. Weitering

Scanning Tunneling Microscopy Group

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

Dopant segregation in a Mnx Ge1-x dilute magnetic semiconductor leads to a remarkable self-assembly of Mn-rich nanocolumns, embedded in a fully compensated Ge matrix. Samples grown at 80°C display a giant positive magnetoresistance that correlates directly with the distribution of magnetic impurities. Annealing at 200°C increases Mn substitution in the host matrix above the threshold for the insulator-metal transition, while maintaining the columnar morphology, and results in global ferromagnetism with conventional negative magnetoresistance. The qualitative features of magnetism and transport in this nanophase material are thus extremely sensitive to the precise location and distribution of the magnetic dopants.

Original language	English
Article number	201201
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	75
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.75.201201
State	Published - May 10 2007

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Li, A. P., Zeng, C., Van Benthem, K., Chisholm, M. F., Shen, J., Nageswara Rao, S. V. S., Dixit, S. K., Feldman, L. C., Petukhov, A. G., Foygel, M., & Weitering, H. H. (2007). Dopant segregation and giant magnetoresistance in manganese-doped germanium. Physical Review B - Condensed Matter and Materials Physics, 75(20), Article 201201. https://doi.org/10.1103/PhysRevB.75.201201

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abstract = "Dopant segregation in a Mnx Ge1-x dilute magnetic semiconductor leads to a remarkable self-assembly of Mn-rich nanocolumns, embedded in a fully compensated Ge matrix. Samples grown at 80°C display a giant positive magnetoresistance that correlates directly with the distribution of magnetic impurities. Annealing at 200°C increases Mn substitution in the host matrix above the threshold for the insulator-metal transition, while maintaining the columnar morphology, and results in global ferromagnetism with conventional negative magnetoresistance. The qualitative features of magnetism and transport in this nanophase material are thus extremely sensitive to the precise location and distribution of the magnetic dopants.",

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AU - Li, A. P.

AU - Zeng, C.

AU - Van Benthem, K.

AU - Chisholm, M. F.

AU - Shen, J.

AU - Nageswara Rao, S. V.S.

AU - Dixit, S. K.

AU - Feldman, L. C.

AU - Petukhov, A. G.

AU - Foygel, M.

AU - Weitering, H. H.

PY - 2007/5/10

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N2 - Dopant segregation in a Mnx Ge1-x dilute magnetic semiconductor leads to a remarkable self-assembly of Mn-rich nanocolumns, embedded in a fully compensated Ge matrix. Samples grown at 80°C display a giant positive magnetoresistance that correlates directly with the distribution of magnetic impurities. Annealing at 200°C increases Mn substitution in the host matrix above the threshold for the insulator-metal transition, while maintaining the columnar morphology, and results in global ferromagnetism with conventional negative magnetoresistance. The qualitative features of magnetism and transport in this nanophase material are thus extremely sensitive to the precise location and distribution of the magnetic dopants.

AB - Dopant segregation in a Mnx Ge1-x dilute magnetic semiconductor leads to a remarkable self-assembly of Mn-rich nanocolumns, embedded in a fully compensated Ge matrix. Samples grown at 80°C display a giant positive magnetoresistance that correlates directly with the distribution of magnetic impurities. Annealing at 200°C increases Mn substitution in the host matrix above the threshold for the insulator-metal transition, while maintaining the columnar morphology, and results in global ferromagnetism with conventional negative magnetoresistance. The qualitative features of magnetism and transport in this nanophase material are thus extremely sensitive to the precise location and distribution of the magnetic dopants.

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Dopant segregation and giant magnetoresistance in manganese-doped germanium

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