Dopant radial inhomogeneity in Mg-doped GaN nanowires

Alexandra Madalina Siladie; Lynda Amichi; Nicolas Mollard; Isabelle Mouton; Bastien Bonef; Catherine Bougerol; Adeline Grenier; Eric Robin; Pierre Henri Jouneau; Nuria Garro; Ana Cros; Bruno Daudin

doi:10.1088/1361-6528/aabbd6

Dopant radial inhomogeneity in Mg-doped GaN nanowires

Alexandra Madalina Siladie, Lynda Amichi, Nicolas Mollard, Isabelle Mouton, Bastien Bonef, Catherine Bougerol, Adeline Grenier, Eric Robin, Pierre Henri Jouneau, Nuria Garro, Ana Cros, Bruno Daudin

electron Microscopy and Microanalysis

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24 Scopus citations

Abstract

Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.

Original language	English
Article number	255706
Journal	Nanotechnology
Volume	29
Issue number	25
DOIs	https://doi.org/10.1088/1361-6528/aabbd6
State	Published - Apr 25 2018

Funding

This work has been partially supported by Agence Nationale de la Recherche (EMOUVAN project-ANR-15-CE24-0006-04). We acknowledge support from GANEX (ANR-11-LABX-0014).

Keywords

Raman spectroscopy
atom probe tomography
gallium nitride nanowires
magnesium incorporation
spatial inhomogeneity of dopants

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10.1088/1361-6528/aabbd6

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title = "Dopant radial inhomogeneity in Mg-doped GaN nanowires",

abstract = "Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.",

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AU - Siladie, Alexandra Madalina

AU - Amichi, Lynda

AU - Mollard, Nicolas

AU - Mouton, Isabelle

AU - Bonef, Bastien

AU - Bougerol, Catherine

AU - Grenier, Adeline

AU - Robin, Eric

AU - Jouneau, Pierre Henri

AU - Garro, Nuria

AU - Cros, Ana

AU - Daudin, Bruno

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N2 - Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.

AB - Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.

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KW - gallium nitride nanowires

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Dopant radial inhomogeneity in Mg-doped GaN nanowires

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