@inproceedings{d7373ff3d09e4c87bb4cca7a6a77ac6c,
title = "Dopant activation and deactivation in InGaAs during sub-millisecond thermal annealing",
abstract = "Dopant activation of Si implanted In0.53Ga0.47As (InGaAs) following laser spike annealing (LSA) was studied at temperatures up to 1000°C with dwells from 250 μs to 2000 μs. Temperatures of the InGaAs under LSA were directly measured using Pt thermistors and calibrated to the known decomposition temperature of a simple polymer. Using spatially resolved probes with single laser stripe scans, the temperature dependent activation and damage behaviors were determined. Compared to furnace annealing, LSA was found to increase active carrier concentration and extend the temperature limit before damage. CAPRES 4-point measurements were used to determine carrier activation while Raman analysis of the LO phonon peak and LO phonon-plasmon coupling mode (LOPCM) peak was used to monitor crystal quality and carrier concentrations. For a 1014 cm-2 Si implant at 20keV, a minimum sheet resistance of 135 Ω/sq was obtained for a 1000 μs dwell at 845°C, with a peak carrier concentration near 8×1018 cm-3.",
author = "Sorg, \{V. C.\} and Zhang, \{S. N.\} and M. Hill and P. Clancy and Thompson, \{M. O.\}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06604.0117ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "117--124",
editor = "Gusev, \{E. P.\} and Timans, \{P. J.\} and F. Roozeboom and S. DeGendt and K. Kakushima and V. Narayanan and Z. Karim",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5",
edition = "4",
}