Domain wall motion in epitaxial Pb (Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy

S. M. Yang; J. Y. Jo; D. J. Kim; H. Sung; T. W. Noh; H. N. Lee; J. G. Yoon; T. K. Song

doi:10.1063/1.2949078

Domain wall motion in epitaxial Pb (Zr,Ti)O₃ capacitors investigated by modified piezoresponse force microscopy

S. M. Yang, J. Y. Jo, D. J. Kim, H. Sung, T. W. Noh, H. N. Lee, J. G. Yoon, T. K. Song

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66 Scopus citations

Abstract

We investigated the time-dependent domain wall motion of epitaxial Pb Zr_0.2Ti_0.8O₃ capacitors 100 nm thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (E_app), showed creep behavior, i.e., 〈v〉 ∼exp[- (E0 E_app)μ] with an exponent μ of 0.9±0.1 and an activation field E0 of about 700 kVcm.

Original language	English
Article number	252901
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2949078
State	Published - 2008

Funding

This study was financially supported by the Creative Research Initiative program (Functionally Integrated Oxide Heterostructure) of MOST/KOSEF. S.M.Y. acknowledges financial support, in part, from the Seoul Science Scholarship. H.N.L. was supported by the LDRD program of ORNL.

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@article{b2b771444a5941c4b6f320164b649a25,

title = "Domain wall motion in epitaxial Pb (Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy",

abstract = "We investigated the time-dependent domain wall motion of epitaxial Pb Zr0.2Ti0.8O3 capacitors 100 nm thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (Eapp), showed creep behavior, i.e., 〈v〉 ∼exp[- (E0 Eapp)μ] with an exponent μ of 0.9±0.1 and an activation field E0 of about 700 kVcm.",

author = "Yang, {S. M.} and Jo, {J. Y.} and Kim, {D. J.} and H. Sung and Noh, {T. W.} and Lee, {H. N.} and Yoon, {J. G.} and Song, {T. K.}",

year = "2008",

doi = "10.1063/1.2949078",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Domain wall motion in epitaxial Pb (Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy

AU - Yang, S. M.

AU - Jo, J. Y.

AU - Kim, D. J.

AU - Sung, H.

AU - Noh, T. W.

AU - Lee, H. N.

AU - Yoon, J. G.

AU - Song, T. K.

PY - 2008

Y1 - 2008

N2 - We investigated the time-dependent domain wall motion of epitaxial Pb Zr0.2Ti0.8O3 capacitors 100 nm thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (Eapp), showed creep behavior, i.e., 〈v〉 ∼exp[- (E0 Eapp)μ] with an exponent μ of 0.9±0.1 and an activation field E0 of about 700 kVcm.

AB - We investigated the time-dependent domain wall motion of epitaxial Pb Zr0.2Ti0.8O3 capacitors 100 nm thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (Eapp), showed creep behavior, i.e., 〈v〉 ∼exp[- (E0 Eapp)μ] with an exponent μ of 0.9±0.1 and an activation field E0 of about 700 kVcm.

UR - http://www.scopus.com/inward/record.url?scp=46049112242&partnerID=8YFLogxK

U2 - 10.1063/1.2949078

DO - 10.1063/1.2949078

M3 - Article

AN - SCOPUS:46049112242

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252901

ER -

Domain wall motion in epitaxial Pb (Zr,Ti)O₃ capacitors investigated by modified piezoresponse force microscopy

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