Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

N. Domingo, S. Farokhipoor, J. Santiso, B. Noheda, G. Catalan

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

Original languageEnglish
Article number334003
JournalJournal of Physics Condensed Matter
Volume29
Issue number33
DOIs
StatePublished - Jul 21 2017
Externally publishedYes

Funding

GC, ND and JS acknowledge funding from MINECO grant MAT2016-77100-C2-1-P and Generalitat de Catalunya grant 2014-SGR-1216. ND also acknowledges funding from Ramon y Cajal contract RYC-2010-06365 and FIS2015-73932-JIN from MINECO. ICN2 acknowledges support of the Spanish MINECO through the Severo Ochoa Centers of Excellence Program under Grant SEV-2013-0295.

FundersFunder number
Generalitat de CatalunyaFIS2015-73932-JIN, 2014-SGR-1216, SEV-2013-0295, RYC-2010-06365
Ministerio de Economía y CompetitividadMAT2016-77100-C2-1-P

    Keywords

    • BiFeO
    • atomic force microscope
    • domain walls
    • magnetoresistance
    • multiferroic
    • scanning probe microscopy

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