Domain switching behaviors of PbZr1-xTixO3 thin films obtained by using piezoresponse force microscopy

Y. H. Jang; Q. Zhang; C. H. Kim; H. J. Hwang; J. H. Cho; S. H. Kim

doi:10.3938/jkps.56.443

Domain switching behaviors of PbZr_1-xTi_xO₃ thin films obtained by using piezoresponse force microscopy

Y. H. Jang, Q. Zhang, C. H. Kim, H. J. Hwang, J. H. Cho, S. H. Kim

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A mechanism for the switching behaviors of ferroelectric thin films has been investigated using piezoresponse force microscopy (PFM), and PFM successfully visualized the magnitude and the phase of the domain. PbZr _1-xTi_xO₃(PZT) thin films with a (111) texture were deposited onto commercial Pt/Ti/SiO₂/Si substrates via the sol-gel technique. A combination of in-plane and outof-plane modes for PFM were used to reconstruct the three-dimensional polarization distribution, and the allowed domain configurations for the PZT films for different symmetries and different textures are illustrated schematically. Also, the domain and the domain switching properties were studied for PZT films with different compositions by applying a DC bias voltage to a localized area.

Original language	English
Pages (from-to)	443-447
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	12
DOIs	https://doi.org/10.3938/jkps.56.443
State	Published - Jan 15 2010
Externally published	Yes

Keywords

Domain switching
Lead zirconate titanate film
Piezoresponse force microscopy

Access to Document

10.3938/jkps.56.443

Cite this

@article{84c9d29b5b8f4b92b12f5f256aa34a4a,

title = "Domain switching behaviors of PbZr1-xTixO3 thin films obtained by using piezoresponse force microscopy",

abstract = "A mechanism for the switching behaviors of ferroelectric thin films has been investigated using piezoresponse force microscopy (PFM), and PFM successfully visualized the magnitude and the phase of the domain. PbZr 1-xTixO3(PZT) thin films with a (111) texture were deposited onto commercial Pt/Ti/SiO2/Si substrates via the sol-gel technique. A combination of in-plane and outof-plane modes for PFM were used to reconstruct the three-dimensional polarization distribution, and the allowed domain configurations for the PZT films for different symmetries and different textures are illustrated schematically. Also, the domain and the domain switching properties were studied for PZT films with different compositions by applying a DC bias voltage to a localized area.",

keywords = "Domain switching, Lead zirconate titanate film, Piezoresponse force microscopy",

author = "Jang, {Y. H.} and Q. Zhang and Kim, {C. H.} and Hwang, {H. J.} and Cho, {J. H.} and Kim, {S. H.}",

year = "2010",

month = jan,

day = "15",

doi = "10.3938/jkps.56.443",

language = "English",

volume = "56",

pages = "443--447",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Springer",

number = "12",

}

TY - JOUR

T1 - Domain switching behaviors of PbZr1-xTixO3 thin films obtained by using piezoresponse force microscopy

AU - Jang, Y. H.

AU - Zhang, Q.

AU - Kim, C. H.

AU - Hwang, H. J.

AU - Cho, J. H.

AU - Kim, S. H.

PY - 2010/1/15

Y1 - 2010/1/15

N2 - A mechanism for the switching behaviors of ferroelectric thin films has been investigated using piezoresponse force microscopy (PFM), and PFM successfully visualized the magnitude and the phase of the domain. PbZr 1-xTixO3(PZT) thin films with a (111) texture were deposited onto commercial Pt/Ti/SiO2/Si substrates via the sol-gel technique. A combination of in-plane and outof-plane modes for PFM were used to reconstruct the three-dimensional polarization distribution, and the allowed domain configurations for the PZT films for different symmetries and different textures are illustrated schematically. Also, the domain and the domain switching properties were studied for PZT films with different compositions by applying a DC bias voltage to a localized area.

AB - A mechanism for the switching behaviors of ferroelectric thin films has been investigated using piezoresponse force microscopy (PFM), and PFM successfully visualized the magnitude and the phase of the domain. PbZr 1-xTixO3(PZT) thin films with a (111) texture were deposited onto commercial Pt/Ti/SiO2/Si substrates via the sol-gel technique. A combination of in-plane and outof-plane modes for PFM were used to reconstruct the three-dimensional polarization distribution, and the allowed domain configurations for the PZT films for different symmetries and different textures are illustrated schematically. Also, the domain and the domain switching properties were studied for PZT films with different compositions by applying a DC bias voltage to a localized area.

KW - Domain switching

KW - Lead zirconate titanate film

KW - Piezoresponse force microscopy

UR - http://www.scopus.com/inward/record.url?scp=77956309704&partnerID=8YFLogxK

U2 - 10.3938/jkps.56.443

DO - 10.3938/jkps.56.443

M3 - Article

AN - SCOPUS:77956309704

SN - 0374-4884

VL - 56

SP - 443

EP - 447

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 12

ER -

Domain switching behaviors of PbZr_1-xTi_xO₃ thin films obtained by using piezoresponse force microscopy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this