Domain engineering for enhanced ferroelectric properties of epitaxial (001) BiFeO thin films

Ho Won Jang; Daniel Ortiz; Seung Hyub Baek; Chad M. Folkman; Rasmi R. Das; Padraic Shafer; Yanbin Chen; Christofer T. Nelson; Xiaoqing Pan; Ramamoorthy Ramesh; Chang Beom Eom

doi:10.1002/adma.200800823

Domain engineering for enhanced ferroelectric properties of epitaxial (001) BiFeO thin films

Ho Won Jang, Daniel Ortiz, Seung Hyub Baek, Chad M. Folkman, Rasmi R. Das, Padraic Shafer, Yanbin Chen, Christofer T. Nelson, Xiaoqing Pan, Ramamoorthy Ramesh, Chang Beom Eom

Research output: Contribution to journal › Article › peer-review

281 Scopus citations

Abstract

The ferroelastic domain variant selection in (001) BiFeO₃ films on miscut (001) SrTiO₃ substrates with coherent SrRuO₃ bottom electrodes and its effect on the ferroelectric properties of the films were reported. This study showed an improvement in the ferroelectric switching behavior and leakage current in BiFeO₃ films applying domain engineering. Atomic force microscopy (AFM), reciprocal space mapping (RSM), and high-resolution X-ray diffraction (HRXRD) used in the study showed that miscut substrate directed the step-flow growth and two-variant stripe domains in the BiFeO₃ films. The preferential distortion of unit cells and the complete step-flow growth induced by the substrate anisotropy created two-variant stripe domains in (001) BiFeO₃ films. Domain engineering can be used for growing high-quality BiFeO₃ films on cubic (001) Si substrates for device applications.

Original language	English
Pages (from-to)	817-823
Number of pages	7
Journal	Advanced Materials
Volume	21
Issue number	7
DOIs	https://doi.org/10.1002/adma.200800823
State	Published - Feb 16 2009
Externally published	Yes

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title = "Domain engineering for enhanced ferroelectric properties of epitaxial (001) BiFeO thin films",

abstract = "The ferroelastic domain variant selection in (001) BiFeO3 films on miscut (001) SrTiO3 substrates with coherent SrRuO3 bottom electrodes and its effect on the ferroelectric properties of the films were reported. This study showed an improvement in the ferroelectric switching behavior and leakage current in BiFeO3 films applying domain engineering. Atomic force microscopy (AFM), reciprocal space mapping (RSM), and high-resolution X-ray diffraction (HRXRD) used in the study showed that miscut substrate directed the step-flow growth and two-variant stripe domains in the BiFeO3 films. The preferential distortion of unit cells and the complete step-flow growth induced by the substrate anisotropy created two-variant stripe domains in (001) BiFeO3 films. Domain engineering can be used for growing high-quality BiFeO3 films on cubic (001) Si substrates for device applications.",

author = "Jang, {Ho Won} and Daniel Ortiz and Baek, {Seung Hyub} and Folkman, {Chad M.} and Das, {Rasmi R.} and Padraic Shafer and Yanbin Chen and Nelson, {Christofer T.} and Xiaoqing Pan and Ramamoorthy Ramesh and Eom, {Chang Beom}",

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doi = "10.1002/adma.200800823",

language = "English",

volume = "21",

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journal = "Advanced Materials",

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T1 - Domain engineering for enhanced ferroelectric properties of epitaxial (001) BiFeO thin films

AU - Jang, Ho Won

AU - Ortiz, Daniel

AU - Baek, Seung Hyub

AU - Folkman, Chad M.

AU - Das, Rasmi R.

AU - Shafer, Padraic

AU - Chen, Yanbin

AU - Nelson, Christofer T.

AU - Pan, Xiaoqing

AU - Ramesh, Ramamoorthy

AU - Eom, Chang Beom

PY - 2009/2/16

Y1 - 2009/2/16

N2 - The ferroelastic domain variant selection in (001) BiFeO3 films on miscut (001) SrTiO3 substrates with coherent SrRuO3 bottom electrodes and its effect on the ferroelectric properties of the films were reported. This study showed an improvement in the ferroelectric switching behavior and leakage current in BiFeO3 films applying domain engineering. Atomic force microscopy (AFM), reciprocal space mapping (RSM), and high-resolution X-ray diffraction (HRXRD) used in the study showed that miscut substrate directed the step-flow growth and two-variant stripe domains in the BiFeO3 films. The preferential distortion of unit cells and the complete step-flow growth induced by the substrate anisotropy created two-variant stripe domains in (001) BiFeO3 films. Domain engineering can be used for growing high-quality BiFeO3 films on cubic (001) Si substrates for device applications.

AB - The ferroelastic domain variant selection in (001) BiFeO3 films on miscut (001) SrTiO3 substrates with coherent SrRuO3 bottom electrodes and its effect on the ferroelectric properties of the films were reported. This study showed an improvement in the ferroelectric switching behavior and leakage current in BiFeO3 films applying domain engineering. Atomic force microscopy (AFM), reciprocal space mapping (RSM), and high-resolution X-ray diffraction (HRXRD) used in the study showed that miscut substrate directed the step-flow growth and two-variant stripe domains in the BiFeO3 films. The preferential distortion of unit cells and the complete step-flow growth induced by the substrate anisotropy created two-variant stripe domains in (001) BiFeO3 films. Domain engineering can be used for growing high-quality BiFeO3 films on cubic (001) Si substrates for device applications.

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JO - Advanced Materials

JF - Advanced Materials

IS - 7

ER -

Domain engineering for enhanced ferroelectric properties of epitaxial (001) BiFeO thin films

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