Domain dynamics during ferroelectric switching

Christopher T. Nelson; Peng Gao; Jacob R. Jokisaari; Colin Heikes; Carolina Adamo; Alexander Melville; Seung Hyub Baek; Chad M. Folkman; Benjamin Winchester; Yijia Gu; Yuanming Liu; Kui Zhang; Enge Wang; Jiangyu Li; Long Qing Chen; Chang Beom Eom; Darrell G. Schlom; Xiaoqing Pan

doi:10.1126/science.1206980

Domain dynamics during ferroelectric switching

Christopher T. Nelson, Peng Gao, Jacob R. Jokisaari, Colin Heikes, Carolina Adamo, Alexander Melville, Seung Hyub Baek, Chad M. Folkman, Benjamin Winchester, Yijia Gu, Yuanming Liu, Kui Zhang, Enge Wang, Jiangyu Li, Long Qing Chen, Chang Beom Eom, Darrell G. Schlom, Xiaoqing Pan

Research output: Contribution to journal › Article › peer-review

326 Scopus citations

Abstract

The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO₃) on a ferromagnetic electrode (La_0.7Sr_0.3MnO₃). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.

Original language	English
Pages (from-to)	968-971
Number of pages	4
Journal	Science
Volume	334
Issue number	6058
DOIs	https://doi.org/10.1126/science.1206980
State	Published - Nov 18 2011
Externally published	Yes

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title = "Domain dynamics during ferroelectric switching",

abstract = "The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO3) on a ferromagnetic electrode (La0.7Sr0.3MnO3). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.",

author = "Nelson, {Christopher T.} and Peng Gao and Jokisaari, {Jacob R.} and Colin Heikes and Carolina Adamo and Alexander Melville and Baek, {Seung Hyub} and Folkman, {Chad M.} and Benjamin Winchester and Yijia Gu and Yuanming Liu and Kui Zhang and Enge Wang and Jiangyu Li and Chen, {Long Qing} and Eom, {Chang Beom} and Schlom, {Darrell G.} and Xiaoqing Pan",

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doi = "10.1126/science.1206980",

language = "English",

volume = "334",

pages = "968--971",

journal = "Science",

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TY - JOUR

T1 - Domain dynamics during ferroelectric switching

AU - Nelson, Christopher T.

AU - Gao, Peng

AU - Jokisaari, Jacob R.

AU - Heikes, Colin

AU - Adamo, Carolina

AU - Melville, Alexander

AU - Baek, Seung Hyub

AU - Folkman, Chad M.

AU - Winchester, Benjamin

AU - Gu, Yijia

AU - Liu, Yuanming

AU - Zhang, Kui

AU - Wang, Enge

AU - Li, Jiangyu

AU - Chen, Long Qing

AU - Eom, Chang Beom

AU - Schlom, Darrell G.

AU - Pan, Xiaoqing

PY - 2011/11/18

Y1 - 2011/11/18

N2 - The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO3) on a ferromagnetic electrode (La0.7Sr0.3MnO3). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.

AB - The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO3) on a ferromagnetic electrode (La0.7Sr0.3MnO3). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.

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U2 - 10.1126/science.1206980

DO - 10.1126/science.1206980

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SN - 0036-8075

VL - 334

SP - 968

EP - 971

JO - Science

JF - Science

IS - 6058

ER -

Domain dynamics during ferroelectric switching

Abstract

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