Abstract
In this work, we demonstrate the formation and electronic influence of lateral heterointerfaces in FeSn containing Kagome and honeycomb layers. Lateral heterostructures offer spatially resolved property control, enabling the integration of dissimilar materials and promoting phenomena not typically observed in vertical heterostructures. Using the molecular beam epitaxy technique, we achieve a controllable synthesis of lateral heterostructures in the Kagome metal FeSn. With scanning tunneling microscopy/spectroscopy in conjunction with first-principles calculations, we provide a comprehensive understanding of the bonding motif connecting the Fe3Sn-terminated Kagome and Sn2-terminated honeycomb surfaces. More importantly, we reveal a distance-dependent evolution of the electronic states in the vicinity of the heterointerfaces. This evolution is significantly influenced by the orbital character of the flat bands. Our findings suggest an approach to modulate the electronic properties of the Kagome lattice, which should be beneficial for the development of future quantum devices.
| Original language | English |
|---|---|
| Pages (from-to) | 8768-8776 |
| Number of pages | 9 |
| Journal | ACS Nano |
| Volume | 18 |
| Issue number | 12 |
| DOIs | |
| State | Published - Mar 26 2024 |
Funding
Experimental work was supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under award number DE-SC0019120. P. P. Zhang acknowledges the financial support from National Science Foundation (DMR-2112691). Theory work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division (M. Yoon) and by the U.S. Department of Energy (DOE), Office of Science, National Quantum Information Science Research Centers, Quantum Science Center (S.-H. Kang), and this research used resources of the Oak Ridge Leadership Computing Facility at the Oak Ridge National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under contract no. DE-AC05-00OR22725 and resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under contract no. DE-AC02-05CH11231 using NERSC award BES-ERCAP0024568. This manuscript has been coauthored by UT-Battelle, LLC under contract no. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan ( http://energy.gov/downloads/doe-public-access-plan ).
Keywords
- FeSn
- Kagome lattice
- first-principles density functional theory calculations (DFT)
- flat band
- lateral heterointerfaces
- molecular beam epitaxy (MBE)
- scanning tunneling microscopy/spectroscopy (STM/STS)