Discovery of a layered multiferroic compound Cu1-xMn1+ySiTe3 with strong magnetoelectric coupling

Chandan De, Yu Liu, Sai Venkata Gayathri Ayyagari, Boyang Zheng, Kyle P. Kelley, Sankalpa Hazra, Jingyang He, Sylwia Pawledzio, Subin Mali, Samaresh Guchaait, Suguru Yoshida, Yingdong Guan, Seng Huat Lee, Milos Sretenovic, Xianglin Ke, Le Wang, Mark H. Engelhard, Yingge Du, Weiwei Xie, Xiaoping WangVincent H. Crespi, Nasim Alem, Venkatraman Gopalan, Qiang Zhang, Zhiqiang Mao

Research output: Contribution to journalArticlepeer-review

Abstract

Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor Cu1-xMn1+ySiTe3 (0.04 ≤ x ≤ 0.26; 0.03 ≤ y ≤ 0.15), which crystallizes in a polar monoclinic structure (Pm space group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides.

Original languageEnglish
Pages (from-to)eadp9379
JournalScience Advances
Volume11
Issue number1
DOIs
StatePublished - Jan 3 2025

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