Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction

Peng Zhang; Andrei A. Istratov; Eicke R. Weber; Christian Kisielowski; Haifeng He; Chris Nelson; John C.H. Spence

doi:10.1063/1.2362978

Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction

Peng Zhang, Andrei A. Istratov, Eicke R. Weber, Christian Kisielowski, Haifeng He, Chris Nelson, John C.H. Spence

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

Using the energy-filtered convergent-beam electron diffraction (CBED) technique in a transmission electron microscope, the authors report here a direct measurement of the lattice parameters of uniaxially strained silicon as close as 25 nm below the gate in a 65 nm node p -type metal-oxide-semiconductor field-effect transistor with SiGe source and drain. It is found that the dominant strain component (0.58%) is compressive along the source-drain direction. The compressive stress is 1.1 GPa along this direction. These findings demonstrate that CBED can serve as a strain metrology technique for the development of strained silicon device technology.

Original language	English
Article number	161907
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2362978
State	Published - 2006

Funding

The UC Berkeley group was supported by SiWEDS. The authors acknowledge the use of the facilities of the National Center for Electron Microscopy, Lawrence Berkeley National Laboratory. J.C.H.S. and H.H. acknowledge the support of Department of Energy under Contract No. DOE.FG03-02ER45596. The authors thank A. Armigliato, M. Wibbelt, and J. Krieger for establishing the ASAC loaning license. They acknowledge the assistance from R. Wise and H. Weijtmans of Texas Instruments and from the TEM group, Santa Clara site of Intel Corporation.

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abstract = "Using the energy-filtered convergent-beam electron diffraction (CBED) technique in a transmission electron microscope, the authors report here a direct measurement of the lattice parameters of uniaxially strained silicon as close as 25 nm below the gate in a 65 nm node p -type metal-oxide-semiconductor field-effect transistor with SiGe source and drain. It is found that the dominant strain component (0.58%) is compressive along the source-drain direction. The compressive stress is 1.1 GPa along this direction. These findings demonstrate that CBED can serve as a strain metrology technique for the development of strained silicon device technology.",

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AU - Istratov, Andrei A.

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AU - He, Haifeng

AU - Nelson, Chris

AU - Spence, John C.H.

PY - 2006

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AB - Using the energy-filtered convergent-beam electron diffraction (CBED) technique in a transmission electron microscope, the authors report here a direct measurement of the lattice parameters of uniaxially strained silicon as close as 25 nm below the gate in a 65 nm node p -type metal-oxide-semiconductor field-effect transistor with SiGe source and drain. It is found that the dominant strain component (0.58%) is compressive along the source-drain direction. The compressive stress is 1.1 GPa along this direction. These findings demonstrate that CBED can serve as a strain metrology technique for the development of strained silicon device technology.

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Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction

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