Direct observations of retention failure in ferroelectric memories

Peng Gao; Christopher T. Nelson; Jacob R. Jokisaari; Yi Zhang; Seung Hyub Baek; Chung Wung Bark; Enge Wang; Yuanming Liu; Jiangyu Li; Chang Beom Eom; Xiaoqing Pan

doi:10.1002/adma.201103983

Direct observations of retention failure in ferroelectric memories

Peng Gao, Christopher T. Nelson, Jacob R. Jokisaari, Yi Zhang, Seung Hyub Baek, Chung Wung Bark, Enge Wang, Yuanming Liu, Jiangyu Li, Chang Beom Eom, Xiaoqing Pan

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.

Original language	English
Pages (from-to)	1106-1110
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	8
DOIs	https://doi.org/10.1002/adma.201103983
State	Published - Feb 21 2012
Externally published	Yes

Keywords

data retention failure
ferroelectrics
polarization switching
transmission electron microscopy

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10.1002/adma.201103983

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keywords = "data retention failure, ferroelectrics, polarization switching, transmission electron microscopy",

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AU - Gao, Peng

AU - Nelson, Christopher T.

AU - Jokisaari, Jacob R.

AU - Zhang, Yi

AU - Baek, Seung Hyub

AU - Bark, Chung Wung

AU - Wang, Enge

AU - Liu, Yuanming

AU - Li, Jiangyu

AU - Eom, Chang Beom

AU - Pan, Xiaoqing

PY - 2012/2/21

Y1 - 2012/2/21

N2 - Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.

AB - Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.

KW - data retention failure

KW - ferroelectrics

KW - polarization switching

KW - transmission electron microscopy

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Direct observations of retention failure in ferroelectric memories

Abstract

Keywords

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