Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy

S. Y. Woo; S. Hosseini Vajargah; S. Ghanad-Tavakoli; R. N. Kleiman; G. A. Botton

doi:10.1063/1.4756957

Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy

S. Y. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R. N. Kleiman, G. A. Botton

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Unambiguous identification of anti-phase boundaries (APBs) in heteroepitaxial films of GaSb grown on Si has been so far elusive. In this work, we present conventional transmission electron microscopy (TEM) diffraction contrast imaging using superlattice reflections, in conjunction with convergent beam electron diffraction analysis, to determine a change in polarity across APBs in order to confirm the presence of anti-phase disorder. In-depth analysis of anti-phase disorder is further supported with atomic resolution high-angle annular dark-field scanning transmission electron microscopy. The nature of APBs in GaSb is further elucidated by a comparison to previous results for GaAs epilayers grown on Si.

Original language	English
Article number	074306
Journal	Journal of Applied Physics
Volume	112
Issue number	7
DOIs	https://doi.org/10.1063/1.4756957
State	Published - Oct 1 2012
Externally published	Yes

Funding

S.Y.W. would like to thank Gabriel Devenyi for the helpful discussions. This work was supported by the Ontario Centres of Excellence and ARISE Technologies. Electron Microscopy work was carried out at the Canadian Centre for Electron Microscopy, a facility supported by NSERC and McMaster University.

Funders	Funder number
Ontario Centres of Excellence
McMaster University
Natural Sciences and Engineering Research Council of Canada
Arisys Technologies

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AU - Kleiman, R. N.

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Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy

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