Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Neil R. Taylor; Yongchao Yu; Mihee Ji; Pooran Joshi; Lei R. Cao

doi:10.1016/j.nima.2020.164961

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Neil R. Taylor, Yongchao Yu, Mihee Ji, Pooran Joshi, Lei R. Cao

Isotope Applications Research

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Abstract

Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

Original language	English
Article number	164961
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	989
DOIs	https://doi.org/10.1016/j.nima.2020.164961
State	Published - Feb 11 2021

Funding

This material is based upon work partially supported by the Department of Energy/National Nuclear Security Administration, USA under Award Number(s) DE-NA0003921 . Neil Taylor is supported under an Integrated University Program Graduate Fellowship . Electron microscopy was performed at the Center for Electron Microscopy and Analysis (CEMAS) at The Ohio State University. This material is based upon work partially supported by the Department of Energy/National Nuclear Security Administration, USA under Award Number(s) DE-NA0003921. Neil Taylor is supported under an Integrated University Program Graduate Fellowship. Electron microscopy was performed at the Center for Electron Microscopy and Analysis (CEMAS) at The Ohio State University. This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

Funders	Funder number
Department of Energy/National Nuclear Security Administration	DE-NA0003921
United States Government
Ohio State University

Keywords

Additive Manufacturing
Aerosol Inkjet Printing
Alpha particles
Radiation detection
Semiconductors
Silicon carbide

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.nima.2020.164961

Cite this

@article{e003667e1b7d4c60b105414279d89afe,

title = "Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers",

abstract = "Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.",

keywords = "Additive Manufacturing, Aerosol Inkjet Printing, Alpha particles, Radiation detection, Semiconductors, Silicon carbide",

author = "Taylor, {Neil R.} and Yongchao Yu and Mihee Ji and Pooran Joshi and Cao, {Lei R.}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2021",

month = feb,

day = "11",

doi = "10.1016/j.nima.2020.164961",

language = "English",

volume = "989",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

}

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers. / Taylor, Neil R.; Yu, Yongchao; Ji, Mihee et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 989, 164961, 11.02.2021.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

AU - Taylor, Neil R.

AU - Yu, Yongchao

AU - Ji, Mihee

AU - Joshi, Pooran

AU - Cao, Lei R.

PY - 2021/2/11

Y1 - 2021/2/11

N2 - Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

AB - Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

KW - Additive Manufacturing

KW - Aerosol Inkjet Printing

KW - Alpha particles

KW - Radiation detection

KW - Semiconductors

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=85097901179&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2020.164961

DO - 10.1016/j.nima.2020.164961

M3 - Article

AN - SCOPUS:85097901179

SN - 0168-9002

VL - 989

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

M1 - 164961

ER -

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

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Keywords

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