Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

Stephen Jesse; Bethany M. Hudak; Eva Zarkadoula; Jiaming Song; Artem Maksov; Miguel Fuentes-Cabrera; Panchapakesan Ganesh; Ivan Kravchenko; Panchapakesan C. Snijders; Andrew R. Lupini; Albina Y. Borisevich; Sergei V. Kalinin

doi:10.1088/1361-6528/aabb79

Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

Stephen Jesse, Bethany M. Hudak, Eva Zarkadoula, Jiaming Song, Artem Maksov, Miguel Fuentes-Cabrera, Panchapakesan Ganesh, Ivan Kravchenko, Panchapakesan C. Snijders, Andrew R. Lupini, Albina Y. Borisevich, Sergei V. Kalinin

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

Original language	English
Article number	255303
Journal	Nanotechnology
Volume	29
Issue number	25
DOIs	https://doi.org/10.1088/1361-6528/aabb79
State	Published - Apr 25 2018

Funding

This research was conducted at and partially supported (SJ, IK, MFC, GP, SVK) at the Center for Nanophase Materials Sciences, which is a US DOE Office of Science User Facility. Part of this work was (BMH, JS, PCS) supported by the Laboratory Directed Research and Development program of the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy. AB, ARL and EZ were supported by the US Department of Energy, Office of Science, Basic Energy Sciences, Division of Materials Science and Engineering. AM acknowledges fellowship support from the UT/ORNL Bredesen Center for Interdisciplinary Research and Graduate Education. This research used resources of the Oak Ridge Leadership Computing Facility at the Oak Ridge National Laboratory, which is supported by the Office of Science of the US Department of Energy under Contract No. DE-AC05-00OR22725.

Funders	Funder number
Center for Nanophase Materials Sciences
DOE Office of Science
Division of Materials Science and Engineering
US Department of Energy
UT/ORNL
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Oak Ridge National Laboratory
Laboratory Directed Research and Development

Keywords

Si
atomic fabrication
electron beam

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10.1088/1361-6528/aabb79

Cite this

Jesse, S., Hudak, B. M., Zarkadoula, E., Song, J., Maksov, A., Fuentes-Cabrera, M., Ganesh, P., Kravchenko, I., Snijders, P. C., Lupini, A. R., Borisevich, A. Y., & Kalinin, S. V. (2018). Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback. Nanotechnology, 29(25), Article 255303. https://doi.org/10.1088/1361-6528/aabb79

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abstract = "Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.",

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AU - Fuentes-Cabrera, Miguel

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N2 - Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

AB - Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

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Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

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