Dimensionality Effects in FeGe2 Nanowires: Enhanced Anisotropic Magnetization and Anomalous Electrical Transport

Siwei Tang; Ivan Kravchenko; T. Z. Ward; Qiang Zou; Jieyu Yi; Cheng Ma; Miaofang Chi; Guixin Cao; An Ping Li; David Mandrus; Zheng Gai

doi:10.1038/s41598-017-05771-6

Dimensionality Effects in FeGe₂ Nanowires: Enhanced Anisotropic Magnetization and Anomalous Electrical Transport

Siwei Tang, Ivan Kravchenko, T. Z. Ward, Qiang Zou, Jieyu Yi, Cheng Ma, Miaofang Chi, Guixin Cao, An Ping Li, David Mandrus, Zheng Gai

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts. The assembly of single-crystal FeGe₂ nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Single FeGe₂ nanowire devices were fabricated using e-beam lithography. Electronic transport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are likely signatures of the two spin density wave states in FeGe₂.

Original language	English
Article number	7126
Journal	Scientific Reports
Volume	7
Issue number	1
DOIs	https://doi.org/10.1038/s41598-017-05771-6
State	Published - Dec 1 2017

Funding

NSF DMR-1410428.

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10.1038/s41598-017-05771-6

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title = "Dimensionality Effects in FeGe2 Nanowires: Enhanced Anisotropic Magnetization and Anomalous Electrical Transport",

abstract = "We report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts. The assembly of single-crystal FeGe2 nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Single FeGe2 nanowire devices were fabricated using e-beam lithography. Electronic transport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are likely signatures of the two spin density wave states in FeGe2.",

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T2 - Enhanced Anisotropic Magnetization and Anomalous Electrical Transport

AU - Tang, Siwei

AU - Kravchenko, Ivan

AU - Ward, T. Z.

AU - Zou, Qiang

AU - Yi, Jieyu

AU - Ma, Cheng

AU - Chi, Miaofang

AU - Cao, Guixin

AU - Li, An Ping

AU - Mandrus, David

AU - Gai, Zheng

PY - 2017/12/1

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N2 - We report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts. The assembly of single-crystal FeGe2 nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Single FeGe2 nanowire devices were fabricated using e-beam lithography. Electronic transport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are likely signatures of the two spin density wave states in FeGe2.

AB - We report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts. The assembly of single-crystal FeGe2 nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Single FeGe2 nanowire devices were fabricated using e-beam lithography. Electronic transport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are likely signatures of the two spin density wave states in FeGe2.

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ER -

Dimensionality Effects in FeGe₂ Nanowires: Enhanced Anisotropic Magnetization and Anomalous Electrical Transport

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