Digital electrostatic electron-beam array lithography

L. R. Baylor; D. H. Lowndes; M. L. Simpson; C. E. Thomas; M. A. Guillorn; V. I. Merkulov; J. H. Whealton; E. D. Ellis; D. K. Hensley; A. V. Melechko

doi:10.1116/1.1520559

Digital electrostatic electron-beam array lithography

L. R. Baylor
, D. H. Lowndes
, M. L. Simpson
, C. E. Thomas
, M. A. Guillorn
, V. I. Merkulov
, J. H. Whealton
, E. D. Ellis
, D. K. Hensley
, A. V. Melechko

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

The DEAL concept is studied and shown to lead to a highly parallel lithography system that can pattern semiconductor wafers at high-throughput rates, without the use of a mask. The programmability of the DEAL concept makes it an attractive system for patterning complex features at small scales.

Original language	English
Pages (from-to)	2646-2650
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1520559
State	Published - Nov 2002

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10.1116/1.1520559

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title = "Digital electrostatic electron-beam array lithography",

abstract = "The DEAL concept is studied and shown to lead to a highly parallel lithography system that can pattern semiconductor wafers at high-throughput rates, without the use of a mask. The programmability of the DEAL concept makes it an attractive system for patterning complex features at small scales.",

author = "Baylor, \{L. R.\} and Lowndes, \{D. H.\} and Simpson, \{M. L.\} and Thomas, \{C. E.\} and Guillorn, \{M. A.\} and Merkulov, \{V. I.\} and Whealton, \{J. H.\} and Ellis, \{E. D.\} and Hensley, \{D. K.\} and Melechko, \{A. V.\}",

year = "2002",

month = nov,

doi = "10.1116/1.1520559",

language = "English",

volume = "20",

pages = "2646--2650",

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issn = "0734-211X",

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T1 - Digital electrostatic electron-beam array lithography

AU - Baylor, L. R.

AU - Lowndes, D. H.

AU - Simpson, M. L.

AU - Thomas, C. E.

AU - Guillorn, M. A.

AU - Merkulov, V. I.

AU - Whealton, J. H.

AU - Ellis, E. D.

AU - Hensley, D. K.

AU - Melechko, A. V.

PY - 2002/11

Y1 - 2002/11

N2 - The DEAL concept is studied and shown to lead to a highly parallel lithography system that can pattern semiconductor wafers at high-throughput rates, without the use of a mask. The programmability of the DEAL concept makes it an attractive system for patterning complex features at small scales.

AB - The DEAL concept is studied and shown to lead to a highly parallel lithography system that can pattern semiconductor wafers at high-throughput rates, without the use of a mask. The programmability of the DEAL concept makes it an attractive system for patterning complex features at small scales.

UR - https://www.scopus.com/pages/publications/0036883135

U2 - 10.1116/1.1520559

DO - 10.1116/1.1520559

M3 - Article

AN - SCOPUS:0036883135

SN - 0734-211X

VL - 20

SP - 2646

EP - 2650

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Digital electrostatic electron-beam array lithography

Abstract

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