Digital electrostatic electron-beam array lithography

L. R. Baylor; D. H. Lowndes; M. L. Simpson; C. E. Thomas; M. A. Guillorn; V. I. Merkulov; J. H. Whealton; E. D. Ellis; D. K. Hensley; A. V. Melechko

doi:10.1116/1.1520559

Digital electrostatic electron-beam array lithography

L. R. Baylor, D. H. Lowndes, M. L. Simpson, C. E. Thomas, M. A. Guillorn, V. I. Merkulov, J. H. Whealton, E. D. Ellis, D. K. Hensley, A. V. Melechko

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

The DEAL concept is studied and shown to lead to a highly parallel lithography system that can pattern semiconductor wafers at high-throughput rates, without the use of a mask. The programmability of the DEAL concept makes it an attractive system for patterning complex features at small scales.

Original language	English
Pages (from-to)	2646-2650
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1520559
State	Published - Nov 2002

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title = "Digital electrostatic electron-beam array lithography",

abstract = "The DEAL concept is studied and shown to lead to a highly parallel lithography system that can pattern semiconductor wafers at high-throughput rates, without the use of a mask. The programmability of the DEAL concept makes it an attractive system for patterning complex features at small scales.",

author = "Baylor, {L. R.} and Lowndes, {D. H.} and Simpson, {M. L.} and Thomas, {C. E.} and Guillorn, {M. A.} and Merkulov, {V. I.} and Whealton, {J. H.} and Ellis, {E. D.} and Hensley, {D. K.} and Melechko, {A. V.}",

year = "2002",

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doi = "10.1116/1.1520559",

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AU - Baylor, L. R.

AU - Lowndes, D. H.

AU - Simpson, M. L.

AU - Thomas, C. E.

AU - Guillorn, M. A.

AU - Merkulov, V. I.

AU - Whealton, J. H.

AU - Ellis, E. D.

AU - Hensley, D. K.

AU - Melechko, A. V.

PY - 2002/11

Y1 - 2002/11

N2 - The DEAL concept is studied and shown to lead to a highly parallel lithography system that can pattern semiconductor wafers at high-throughput rates, without the use of a mask. The programmability of the DEAL concept makes it an attractive system for patterning complex features at small scales.

AB - The DEAL concept is studied and shown to lead to a highly parallel lithography system that can pattern semiconductor wafers at high-throughput rates, without the use of a mask. The programmability of the DEAL concept makes it an attractive system for patterning complex features at small scales.

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DO - 10.1116/1.1520559

M3 - Article

AN - SCOPUS:0036883135

SN - 0734-211X

VL - 20

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EP - 2650

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Digital electrostatic electron-beam array lithography

Abstract

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