Abstract
The σ-function method was used to calculate the one dimensional diffusion of positrons to the surface of semiconductors with an internal electric field. A radiative and an absorbing boundary conditions were adopted for the semi-infinite medium and a film with a thickness d respectively. The fractions of positrons diffusing back to the surface are obtained under different positron implantation profiles. The results can be used to the analysis of experimental data for the overlayer/substrate system which contains one film or several films and a semi-infinite medium.
| Original language | English |
|---|---|
| Pages (from-to) | 199-202 |
| Number of pages | 4 |
| Journal | He Jishu/Nuclear Techniques |
| Volume | 18 |
| Issue number | 4 |
| State | Published - Apr 1995 |
| Externally published | Yes |