Diffusion of positrons to surface in semiconductors

J. Jiang, X. Z. Zhou, J. Zhu, C. W. Lung

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

In this paper, we report a theoretical study of the diffusion of positrons to the surface for a semi-infinite medium and a film with a thickness of d in semiconductors by using a δ-function method. The results can be used to the analysis of experimental data for the overlayer/substrate system which contains one film or several films and a semi-infinite medium.

Original languageEnglish
Pages (from-to)395-398
Number of pages4
JournalMaterials Science Forum
Volume175-178
Issue numberpt 1
StatePublished - 1995
Externally publishedYes
EventProceedings of the 10th International Conference on Positron Annihilation. Part 1 (of 2) - Beijing, China
Duration: May 23 1994May 29 1994

Fingerprint

Dive into the research topics of 'Diffusion of positrons to surface in semiconductors'. Together they form a unique fingerprint.

Cite this