Device degradation studies of CIGS solar cells using in-situ high temperature X-ray diffraction

R. Krishnan; G. Tong; W. K. Kim; R. Kaczynski; U. Schoop; E. A. Payzant; T. J. Anderson

doi:10.1109/PVSC.2012.6317982

Device degradation studies of CIGS solar cells using in-situ high temperature X-ray diffraction

R. Krishnan, G. Tong, W. K. Kim, R. Kaczynski, U. Schoop, E. A. Payzant, T. J. Anderson

Materials Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

In-situ X-ray diffraction (HT-XRD) was used to study the degradation mechanism of the CIGS device structure SS/Mo/CIGS/CdS/ITO. Temperature ramp HTXRD experiments carried out in both N₂ and forming gas ambient revealed formation of the solid solution Y-CuCd₂(Ga _xIn_1-x)Se₄ at ∼400°C. Time dependent XRD patterns were collected at constant temperature for four temperatures in the range 420 to 480°C to extract the first order rate parameters for formation of this phase using the Avrami model. Activation energy of 233.5 (±45) kJ/mol and pre-exponential value 8.3×10¹³ s^-1 were estimated. Extrapolation of the reaction rate to a typical module operating temperature (50 °C) indicated the rate of formation of this complex compound is sufficiently low that the extent of reaction is negligible during the module lifetime of 30 years.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	1970-1973
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2012.6317982
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	06/3/12 → 06/8/12

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2012.6317982

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Krishnan, R., Tong, G., Kim, W. K., Kaczynski, R., Schoop, U., Payzant, E. A., & Anderson, T. J. (2012). Device degradation studies of CIGS solar cells using in-situ high temperature X-ray diffraction. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 1970-1973). Article 6317982 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317982

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title = "Device degradation studies of CIGS solar cells using in-situ high temperature X-ray diffraction",

abstract = "In-situ X-ray diffraction (HT-XRD) was used to study the degradation mechanism of the CIGS device structure SS/Mo/CIGS/CdS/ITO. Temperature ramp HTXRD experiments carried out in both N2 and forming gas ambient revealed formation of the solid solution Y-CuCd2(Ga xIn1-x)Se4 at ∼400°C. Time dependent XRD patterns were collected at constant temperature for four temperatures in the range 420 to 480°C to extract the first order rate parameters for formation of this phase using the Avrami model. Activation energy of 233.5 (±45) kJ/mol and pre-exponential value 8.3×1013 s-1 were estimated. Extrapolation of the reaction rate to a typical module operating temperature (50 °C) indicated the rate of formation of this complex compound is sufficiently low that the extent of reaction is negligible during the module lifetime of 30 years.",

author = "R. Krishnan and G. Tong and Kim, {W. K.} and R. Kaczynski and U. Schoop and Payzant, {E. A.} and Anderson, {T. J.}",

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doi = "10.1109/PVSC.2012.6317982",

language = "English",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1970--1973",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Krishnan, R, Tong, G, Kim, WK, Kaczynski, R, Schoop, U, Payzant, EA & Anderson, TJ 2012, Device degradation studies of CIGS solar cells using in-situ high temperature X-ray diffraction. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317982, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1970-1973, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 06/3/12. https://doi.org/10.1109/PVSC.2012.6317982

Device degradation studies of CIGS solar cells using in-situ high temperature X-ray diffraction. / Krishnan, R.; Tong, G.; Kim, W. K. et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 1970-1973 6317982 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Krishnan, R.

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AU - Kim, W. K.

AU - Kaczynski, R.

AU - Schoop, U.

AU - Payzant, E. A.

AU - Anderson, T. J.

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N2 - In-situ X-ray diffraction (HT-XRD) was used to study the degradation mechanism of the CIGS device structure SS/Mo/CIGS/CdS/ITO. Temperature ramp HTXRD experiments carried out in both N2 and forming gas ambient revealed formation of the solid solution Y-CuCd2(Ga xIn1-x)Se4 at ∼400°C. Time dependent XRD patterns were collected at constant temperature for four temperatures in the range 420 to 480°C to extract the first order rate parameters for formation of this phase using the Avrami model. Activation energy of 233.5 (±45) kJ/mol and pre-exponential value 8.3×1013 s-1 were estimated. Extrapolation of the reaction rate to a typical module operating temperature (50 °C) indicated the rate of formation of this complex compound is sufficiently low that the extent of reaction is negligible during the module lifetime of 30 years.

AB - In-situ X-ray diffraction (HT-XRD) was used to study the degradation mechanism of the CIGS device structure SS/Mo/CIGS/CdS/ITO. Temperature ramp HTXRD experiments carried out in both N2 and forming gas ambient revealed formation of the solid solution Y-CuCd2(Ga xIn1-x)Se4 at ∼400°C. Time dependent XRD patterns were collected at constant temperature for four temperatures in the range 420 to 480°C to extract the first order rate parameters for formation of this phase using the Avrami model. Activation energy of 233.5 (±45) kJ/mol and pre-exponential value 8.3×1013 s-1 were estimated. Extrapolation of the reaction rate to a typical module operating temperature (50 °C) indicated the rate of formation of this complex compound is sufficiently low that the extent of reaction is negligible during the module lifetime of 30 years.

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

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ER -

Device degradation studies of CIGS solar cells using in-situ high temperature X-ray diffraction

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