Abstract
A major technological challenge in photovoltaics is the implementation of a lattice matched optically efficient material to be used in conjunction with silicon for tandem photovoltaics. Detailed balance calculations predict an increase in efficiency of up to 12 percentage points for a tandem cell compared with single-junction silicon. Given that the III-V materials currently hold world record efficiencies, both for single and multijunction cells, it would be transformative to develop a material that has similar properties to the III-V's which is also lattice matched to silicon. The II-IV-V2 chalcopyrites are a promising class of materials that could satisfy these criteria. ZnSiP2 in particular is known to have a bandgap of ∼2 eV, a lattice mismatch with silicon of 0.5%, and is earth abundant. Its direct bandgap is symmetry-forbidden. We have grown single crystals of ZnSiP2 by a flux growth technique. Structure and phase purity have been confirmed by X-ray diffraction and transmission electron microscopy. Optical measurements, along with a calculation of the absorption spectrum, confirm the ∼ 2 eV bandgap. Because of its structural similarity to both crystalline silicon and the III-V's, ZnSiP2 is expected to have good optoelectronic performance.
Original language | English |
---|---|
Article number | 6951349 |
Pages (from-to) | 17-21 |
Number of pages | 5 |
Journal | IEEE Journal of Photovoltaics |
Volume | 5 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2015 |
Externally published | Yes |
Keywords
- Density functional theory (DFT)
- ZnSiP2
- photovoltaic cells
- silicon
- tandem photovoltaics