DEVELOPMENT OF WET NITROGEN DOPING TO IMPROVE THE PERFORMANCE OF HALF-WAVE RESONATORS

Yuting Wu, Andrei Ganshyn, Chris Compton, Ethan Metzgar, Kenji Saito, Kyle Elliott, Laura Popielarski, Sang Hoon Kim, Spencer Combs, Taro Konomi, Ting Xu, Walter Hartung, Wei Chang, Yoolim Cheon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new surface treatment method is being developed, wet nitrogen doping, in which nitric acid is added during electropolishing (EP). In the first trial on a FRIB β = 0.53 half-wave resonator (HWR), a high quality factor (Q0 = 8 × 1010) was observed at 2 K at low field (accelerating gradient ≤ 0.5 MV/m) without an anti-Q slope. It is known that the Q0 can be increased by shortening the mean free path via surface contamination by oxygen. Low-temperature baking (LTB) can allow oxygen to diffuse into the surface to a depth similar to the RF penetration depth. However, nitrogen cannot diffuse via LTB. Therefore, the mechanism for increasing Q0 with N-doping has not been clearly understood. First results and analyses for HWR wet N-doping will be presented.

Original languageEnglish
Title of host publicationProceedings of the 32nd Linear Accelerator Conference, LINAC 2024
EditorsKelly Jaje
PublisherJACoW Publishing
Pages287-290
Number of pages4
ISBN (Electronic)9783954502196
DOIs
StatePublished - 2024
Externally publishedYes
Event32nd Linear Accelerator Conference, LINAC 2024 - Chicago, United States
Duration: Aug 25 2024Aug 30 2024

Publication series

NameProceedings - Linear Accelerator Conference, LINAC
ISSN (Print)2226-0366

Conference

Conference32nd Linear Accelerator Conference, LINAC 2024
Country/TerritoryUnited States
CityChicago
Period08/25/2408/30/24

Funding

Work supported by the U.S. Department of Energy, Office of Science, DE-S RC114424

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