TY - JOUR
T1 - Development of high power EUV sources for lithography
AU - Borisov, Vladimir M.
AU - Ahmad, Imtiaz
AU - Goetze, Sven
AU - Ivanov, Alexander S.
AU - Khristoforov, Oleg B.
AU - Kleinschmidt, Jurgen
AU - Korobotchko, Vladimir
AU - Ringling, Jens
AU - Schriever, Guido
AU - Stamm, Uwe
AU - Vinokhodov, Alexander Y.
PY - 2002
Y1 - 2002
N2 - We report on the experimental status of the development of gas discharge produced plasma EUV sources for lithography based on the Z-pinch concept. The plasma size of ∼1.3 mm × 1.5 mm has been matched to come close to the requirements resulting from the etendue of the optical system. The spatial stability of the plasma size as well as the plasma center is better than 15 % standard deviation. The solid angle of emission is 1.8 sr, i.e. +/- 45 deg. The sources can be operated continuously at 1000 Hz repetition frequency and provide an EUV in-band power of 10 W in 1.8 sr. Spectral measurements providing in-band and out-of-band spectral distribution of the source are discussed.
AB - We report on the experimental status of the development of gas discharge produced plasma EUV sources for lithography based on the Z-pinch concept. The plasma size of ∼1.3 mm × 1.5 mm has been matched to come close to the requirements resulting from the etendue of the optical system. The spatial stability of the plasma size as well as the plasma center is better than 15 % standard deviation. The solid angle of emission is 1.8 sr, i.e. +/- 45 deg. The sources can be operated continuously at 1000 Hz repetition frequency and provide an EUV in-band power of 10 W in 1.8 sr. Spectral measurements providing in-band and out-of-band spectral distribution of the source are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0012996674&partnerID=8YFLogxK
U2 - 10.1117/12.472338
DO - 10.1117/12.472338
M3 - Article
AN - SCOPUS:0012996674
SN - 0277-786X
VL - 4688
SP - 626
EP - 633
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
IS - 2
ER -