Development of high-K embedded capacitors on printed wiring board using sol-gel and foil-transfer processes

Isaac Robin Abothu; P. Markondeya Raj; Devarajan Balaraman; Vinu Govind; Swapan Bhattacharya; Michael D. Sacks; M. Swaminathan; Michael J. Lance; Rao R. Tummala

Development of high-K embedded capacitors on printed wiring board using sol-gel and foil-transfer processes

Isaac Robin Abothu, P. Markondeya Raj, Devarajan Balaraman, Vinu Govind, Swapan Bhattacharya, Michael D. Sacks, M. Swaminathan, Michael J. Lance, Rao R. Tummala

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

The fabrication of high-k embedded capacitors on printed wiring board was analyzed using sol-gel and foil-transfer processes. High-k BaTiO ₃ and SrTiO ₃ capacitive layers were synthesized using a sol-gel process with barium/strontium 2-ethylhexonate and titanium sopropoxide as precursors. The scattering parameters were measured using an S-parameter Network Analyzer (HP Model 8720 ES), with probes being calibrated using open, short, and matched 50 Ohm structures on an aluminum oxide substrate. It was found that the high permeability of Ni and lower conductivity compared to copper decreased the skin depth and increased the resistivity of copper.

Original language	English
Pages (from-to)	514-520
Number of pages	7
Journal	Proceedings - Electronic Components and Technology Conference
Volume	1
State	Published - 2004
Externally published	Yes
Event	2004 Proceedings - 54th Electronic Components and Technology Conference - Las Vegas, NV, United States Duration: Jun 1 2004 → Jun 4 2004

Cite this

@article{fbfbef99d55047d2babd198343f14b2b,

title = "Development of high-K embedded capacitors on printed wiring board using sol-gel and foil-transfer processes",

abstract = "The fabrication of high-k embedded capacitors on printed wiring board was analyzed using sol-gel and foil-transfer processes. High-k BaTiO 3 and SrTiO 3 capacitive layers were synthesized using a sol-gel process with barium/strontium 2-ethylhexonate and titanium sopropoxide as precursors. The scattering parameters were measured using an S-parameter Network Analyzer (HP Model 8720 ES), with probes being calibrated using open, short, and matched 50 Ohm structures on an aluminum oxide substrate. It was found that the high permeability of Ni and lower conductivity compared to copper decreased the skin depth and increased the resistivity of copper.",

author = "Abothu, {Isaac Robin} and Raj, {P. Markondeya} and Devarajan Balaraman and Vinu Govind and Swapan Bhattacharya and Sacks, {Michael D.} and M. Swaminathan and Lance, {Michael J.} and Tummala, {Rao R.}",

year = "2004",

language = "English",

volume = "1",

pages = "514--520",

journal = "Proceedings - Electronic Components and Technology Conference",

issn = "0569-5503",

note = "2004 Proceedings - 54th Electronic Components and Technology Conference ; Conference date: 01-06-2004 Through 04-06-2004",

}

TY - JOUR

T1 - Development of high-K embedded capacitors on printed wiring board using sol-gel and foil-transfer processes

AU - Abothu, Isaac Robin

AU - Raj, P. Markondeya

AU - Balaraman, Devarajan

AU - Govind, Vinu

AU - Bhattacharya, Swapan

AU - Sacks, Michael D.

AU - Swaminathan, M.

AU - Lance, Michael J.

AU - Tummala, Rao R.

PY - 2004

Y1 - 2004

N2 - The fabrication of high-k embedded capacitors on printed wiring board was analyzed using sol-gel and foil-transfer processes. High-k BaTiO 3 and SrTiO 3 capacitive layers were synthesized using a sol-gel process with barium/strontium 2-ethylhexonate and titanium sopropoxide as precursors. The scattering parameters were measured using an S-parameter Network Analyzer (HP Model 8720 ES), with probes being calibrated using open, short, and matched 50 Ohm structures on an aluminum oxide substrate. It was found that the high permeability of Ni and lower conductivity compared to copper decreased the skin depth and increased the resistivity of copper.

AB - The fabrication of high-k embedded capacitors on printed wiring board was analyzed using sol-gel and foil-transfer processes. High-k BaTiO 3 and SrTiO 3 capacitive layers were synthesized using a sol-gel process with barium/strontium 2-ethylhexonate and titanium sopropoxide as precursors. The scattering parameters were measured using an S-parameter Network Analyzer (HP Model 8720 ES), with probes being calibrated using open, short, and matched 50 Ohm structures on an aluminum oxide substrate. It was found that the high permeability of Ni and lower conductivity compared to copper decreased the skin depth and increased the resistivity of copper.

UR - http://www.scopus.com/inward/record.url?scp=10644233912&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:10644233912

SN - 0569-5503

VL - 1

SP - 514

EP - 520

JO - Proceedings - Electronic Components and Technology Conference

JF - Proceedings - Electronic Components and Technology Conference

T2 - 2004 Proceedings - 54th Electronic Components and Technology Conference

Y2 - 1 June 2004 through 4 June 2004

ER -

Development of high-K embedded capacitors on printed wiring board using sol-gel and foil-transfer processes

Abstract

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