Development of enhancement mode AlN/GaN high electron mobility transistors

C. Y. Chang; S. J. Pearton; C. F. Lo; F. Ren; I. I. Kravchenko; A. M. Dabiran; A. M. Wowchak; B. Cui; P. P. Chow

doi:10.1063/1.3168648

Development of enhancement mode AlN/GaN high electron mobility transistors

C. Y. Chang, S. J. Pearton, C. F. Lo, F. Ren, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Enhancement mode AlN/GaN high electron mobility transistors (HEMTs) were fabricated from originally depletion-mode structures using oxygen plasma treatment on the gate area prior to the gate metallization. Starting with a depletion mode AlN/GaN HEMT, the threshold voltage of the HEMT could be shifted from -3.2 to 1 V depending on the oxygen plasma treatment time to partially convert the AlN barrier layer into Al oxide. The gate current was reduced and the current-voltage curves show metal-oxide semiconductor diodelike characteristics after oxygen plasma treatment.

Original language	English
Article number	263505
Journal	Applied Physics Letters
Volume	94
Issue number	26
DOIs	https://doi.org/10.1063/1.3168648
State	Published - 2009

Funding

The work at SVTA was partially supported by NASA Grant No. NNX09CA76C. A portion of this research at Oak Ridge National Laboratory’s Center for Nanophase Materials Sciences was sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy.

Funders	Funder number
Scientific User Facilities Division
U.S. Department of Energy
National Aeronautics and Space Administration	NNX09CA76C
Basic Energy Sciences
Oak Ridge National Laboratory

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abstract = "Enhancement mode AlN/GaN high electron mobility transistors (HEMTs) were fabricated from originally depletion-mode structures using oxygen plasma treatment on the gate area prior to the gate metallization. Starting with a depletion mode AlN/GaN HEMT, the threshold voltage of the HEMT could be shifted from -3.2 to 1 V depending on the oxygen plasma treatment time to partially convert the AlN barrier layer into Al oxide. The gate current was reduced and the current-voltage curves show metal-oxide semiconductor diodelike characteristics after oxygen plasma treatment.",

author = "Chang, {C. Y.} and Pearton, {S. J.} and Lo, {C. F.} and F. Ren and Kravchenko, {I. I.} and Dabiran, {A. M.} and Wowchak, {A. M.} and B. Cui and Chow, {P. P.}",

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AU - Chang, C. Y.

AU - Pearton, S. J.

AU - Lo, C. F.

AU - Ren, F.

AU - Kravchenko, I. I.

AU - Dabiran, A. M.

AU - Wowchak, A. M.

AU - Cui, B.

AU - Chow, P. P.

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AB - Enhancement mode AlN/GaN high electron mobility transistors (HEMTs) were fabricated from originally depletion-mode structures using oxygen plasma treatment on the gate area prior to the gate metallization. Starting with a depletion mode AlN/GaN HEMT, the threshold voltage of the HEMT could be shifted from -3.2 to 1 V depending on the oxygen plasma treatment time to partially convert the AlN barrier layer into Al oxide. The gate current was reduced and the current-voltage curves show metal-oxide semiconductor diodelike characteristics after oxygen plasma treatment.

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Development of enhancement mode AlN/GaN high electron mobility transistors

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