Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

Geetika Jain; Ranjeet Dalal; Ashutosh Bhardwaj; Kirti Ranjan; Alexander Dierlamm; Frank Hartmann; Robert Eber; Marcel Demarteau

doi:10.1016/j.nima.2017.10.010

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

Geetika Jain, Ranjeet Dalal, Ashutosh Bhardwaj, Kirti Ranjan, Alexander Dierlamm, Frank Hartmann, Robert Eber, Marcel Demarteau

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30μm and strip pitch of 55μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2–5 kΩ cm, with a thickness of 300μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Original language	English
Pages (from-to)	1-10
Number of pages	10
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	882
DOIs	https://doi.org/10.1016/j.nima.2017.10.010
State	Published - Feb 21 2018
Externally published	Yes

Funding

We would like to acknowledge DST (ref. no. SR/MF/PS-02/2014-DUA (C) and SR/MF/PS-02/2014-DUA (G) ), R&D grant University of Delhi , CSIR and UGC (ref. no. Schs/SRF/AA/139/F-203/2013-14 ) for financial support. We are thankful to Mr. Y. P. Prabhakara Rao and Ms. Rejeena Rani from BEL for the detector fabrication.

Funders	Funder number
Council of Scientific and Industrial Research, India
University Grants Committee	Schs/SRF/AA/139/F-203/2013-14
University of Delhi
Department of Science and Technology, Government of West Bengal	SR/MF/PS-02/2014-DUA, SR/MF/PS-02/2014-DUA (G)

Keywords

AC-coupled
Characterization
Silicon detectors

Access to Document

10.1016/j.nima.2017.10.010

Cite this

Jain, G., Dalal, R., Bhardwaj, A., Ranjan, K., Dierlamm, A., Hartmann, F., Eber, R., & Demarteau, M. (2018). Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 882, 1-10. https://doi.org/10.1016/j.nima.2017.10.010

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title = "Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments",

abstract = "P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30μm and strip pitch of 55μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2–5 kΩ cm, with a thickness of 300μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.",

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author = "Geetika Jain and Ranjeet Dalal and Ashutosh Bhardwaj and Kirti Ranjan and Alexander Dierlamm and Frank Hartmann and Robert Eber and Marcel Demarteau",

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Jain, G, Dalal, R, Bhardwaj, A, Ranjan, K, Dierlamm, A, Hartmann, F, Eber, R & Demarteau, M 2018, 'Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 882, pp. 1-10. https://doi.org/10.1016/j.nima.2017.10.010

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments. / Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 882, 21.02.2018, p. 1-10.

Research output: Contribution to journal › Article › peer-review

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T1 - Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

AU - Jain, Geetika

AU - Dalal, Ranjeet

AU - Bhardwaj, Ashutosh

AU - Ranjan, Kirti

AU - Dierlamm, Alexander

AU - Hartmann, Frank

AU - Eber, Robert

AU - Demarteau, Marcel

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AB - P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30μm and strip pitch of 55μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2–5 kΩ cm, with a thickness of 300μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

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Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

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Keywords

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