Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

Geetika Jain, Ranjeet Dalal, Ashutosh Bhardwaj, Kirti Ranjan, Alexander Dierlamm, Frank Hartmann, Robert Eber, Marcel Demarteau

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30μm and strip pitch of 55μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2–5 kΩ cm, with a thickness of 300μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Original languageEnglish
Pages (from-to)1-10
Number of pages10
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume882
DOIs
StatePublished - Feb 21 2018
Externally publishedYes

Funding

We would like to acknowledge DST (ref. no. SR/MF/PS-02/2014-DUA (C) and SR/MF/PS-02/2014-DUA (G) ), R&D grant University of Delhi , CSIR and UGC (ref. no. Schs/SRF/AA/139/F-203/2013-14 ) for financial support. We are thankful to Mr. Y. P. Prabhakara Rao and Ms. Rejeena Rani from BEL for the detector fabrication.

Keywords

  • AC-coupled
  • Characterization
  • Silicon detectors

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