Developing a model for electromagnetic control of dopant segregation during liquid-encapsulated crystal growth of compound semiconductors

N. Ma; D. F. Bliss; G. G. Bryant

doi:10.1016/S0022-0248(99)00857-X

Developing a model for electromagnetic control of dopant segregation during liquid-encapsulated crystal growth of compound semiconductors

N. Ma, D. F. Bliss, G. G. Bryant

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The dopant transport during growth depends on both the diffusion and the convection of dopant during the entire period of time needed to grow a crystal. The application of even a moderate magnetic field is enough to damp the melt motion in order to eliminate oscillatory or turbulent melt motions which cause microsegregation or striations, and provide the electromagnetic control needed to minimize macrosegregation. For the moderate-strength magnetic fields used during liquid-encapsulated crystal growth processes, the dopant transport in the melt is dominated by convection, and the constant-concentration curves resemble the streamlines. The strong flow adjacent to the crystal-melt interface produces a lateral uniformity in the dopant concentration in the melt adjacent to the interface and consequently in the crystal.

Original language	English
Pages (from-to)	169-173
Number of pages	5
Journal	Journal of Crystal Growth
Volume	211
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(99)00857-X
State	Published - Apr 1 2000
Externally published	Yes
Event	The 11th American Conference on Crystal Growth and Epitaxy - Tucson, AZ, USA Duration: Aug 1 1999 → Aug 6 1999

Funding

The research at University of Missouri was supported by the University of Missouri Research Board, and the research at the Air Force Research Laboratory was supported by the Air Force Office of Scientific Research.

Funders	Funder number
Air Force Office of Scientific Research
University of Missouri

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10.1016/S0022-0248(99)00857-X

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title = "Developing a model for electromagnetic control of dopant segregation during liquid-encapsulated crystal growth of compound semiconductors",

abstract = "The dopant transport during growth depends on both the diffusion and the convection of dopant during the entire period of time needed to grow a crystal. The application of even a moderate magnetic field is enough to damp the melt motion in order to eliminate oscillatory or turbulent melt motions which cause microsegregation or striations, and provide the electromagnetic control needed to minimize macrosegregation. For the moderate-strength magnetic fields used during liquid-encapsulated crystal growth processes, the dopant transport in the melt is dominated by convection, and the constant-concentration curves resemble the streamlines. The strong flow adjacent to the crystal-melt interface produces a lateral uniformity in the dopant concentration in the melt adjacent to the interface and consequently in the crystal.",

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AU - Bliss, D. F.

AU - Bryant, G. G.

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N2 - The dopant transport during growth depends on both the diffusion and the convection of dopant during the entire period of time needed to grow a crystal. The application of even a moderate magnetic field is enough to damp the melt motion in order to eliminate oscillatory or turbulent melt motions which cause microsegregation or striations, and provide the electromagnetic control needed to minimize macrosegregation. For the moderate-strength magnetic fields used during liquid-encapsulated crystal growth processes, the dopant transport in the melt is dominated by convection, and the constant-concentration curves resemble the streamlines. The strong flow adjacent to the crystal-melt interface produces a lateral uniformity in the dopant concentration in the melt adjacent to the interface and consequently in the crystal.

AB - The dopant transport during growth depends on both the diffusion and the convection of dopant during the entire period of time needed to grow a crystal. The application of even a moderate magnetic field is enough to damp the melt motion in order to eliminate oscillatory or turbulent melt motions which cause microsegregation or striations, and provide the electromagnetic control needed to minimize macrosegregation. For the moderate-strength magnetic fields used during liquid-encapsulated crystal growth processes, the dopant transport in the melt is dominated by convection, and the constant-concentration curves resemble the streamlines. The strong flow adjacent to the crystal-melt interface produces a lateral uniformity in the dopant concentration in the melt adjacent to the interface and consequently in the crystal.

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ER -

Developing a model for electromagnetic control of dopant segregation during liquid-encapsulated crystal growth of compound semiconductors

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