Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

Weijun Luo; Alexander A. Puretzky; Benjamin J. Lawrie; Qishuo Tan; Hongze Gao; Zhuofa Chen; Alexander V. Sergienko; Anna K. Swan; Liangbo Liang; Xi Ling

doi:10.1021/acsphotonics.3c00052

Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

Weijun Luo, Alexander A. Puretzky, Benjamin J. Lawrie, Qishuo Tan, Hongze Gao, Zhuofa Chen, Alexander V. Sergienko, Anna K. Swan, Liangbo Liang, Xi Ling

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

Original language	English
Pages (from-to)	2530-2539
Number of pages	10
Journal	ACS Photonics
Volume	10
Issue number	8
DOIs	https://doi.org/10.1021/acsphotonics.3c00052
State	Published - Aug 16 2023

Funding

This material is based upon study supported by the National Science Foundation (NSF) under Grant No. (1945364). Study by X.L. was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under Award DE-SC0021064. W.L., X.L., and A.K.S. acknowledge the support of National Science Foundation (NSF) under Grant No. (2111160). The photoluminescence and photon-statistics measurements were performed at the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy Office of Science User Facility. W.L. acknowledges Dr. Y.Y. Pai from Oak Ridge National Laboratory for his help with experimental automation. X.L., A.S., and A.K.S. acknowledge the membership of the Photonics Center at Boston University. The computational study is performed using Shared Computing Cluster at Boston University.

Funders	Funder number
National Science Foundation	1945364
U.S. Department of Energy
Office of Science
Basic Energy Sciences	2111160, DE-SC0021064

Keywords

2D materials
gallium selenide
photoluminescence
strain engineering

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10.1021/acsphotonics.3c00052

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title = "Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe",

abstract = "The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.",

keywords = "2D materials, gallium selenide, photoluminescence, strain engineering",

author = "Weijun Luo and Puretzky, {Alexander A.} and Lawrie, {Benjamin J.} and Qishuo Tan and Hongze Gao and Zhuofa Chen and Sergienko, {Alexander V.} and Swan, {Anna K.} and Liangbo Liang and Xi Ling",

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year = "2023",

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doi = "10.1021/acsphotonics.3c00052",

language = "English",

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AU - Luo, Weijun

AU - Puretzky, Alexander A.

AU - Lawrie, Benjamin J.

AU - Tan, Qishuo

AU - Gao, Hongze

AU - Chen, Zhuofa

AU - Sergienko, Alexander V.

AU - Swan, Anna K.

AU - Liang, Liangbo

AU - Ling, Xi

PY - 2023/8/16

Y1 - 2023/8/16

N2 - The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

AB - The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

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Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

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