@inproceedings{8a8020afcdb5473084fa45ad2a18b602,
title = "Detection of photosystem I reaction centers using chemically derivatized high electron mobility transistor",
abstract = "This paper presents for the first time a microsensor for detecting Photosystem I (PS I) reaction centers. In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers, Photosystems I and II (PS I and PS II). Photon capture triggers rapid charge separation and the conversion of light energy into an electric voltage across the nanometer-scale (∼6 nm) reaction centers. AlGaN/GaN based High Electron Mobility Transistors (HEMTs) show high current throughputs and greater sensitivity to surface charges. PS I molecules were chemically immobilized on the HEMT device and significant changes in the transistor characteristics were noticed. With zero gate bias and S V at drain terminal, drain current changes by about 5 mA for 6μL drop of PS I solution. The difference between light and dark measurements is ∼0.8 mA. Test results demonstrate that this approach is a potential candidate for detection and characterization of biomolecular photodiodes - PS I reaction centers.",
author = "Eliza, {S. A.} and Islam, {S. K.} and I. Lee and E. Greenbaum and Ericson, {M. N.} and Khan, {M. A.}",
year = "2007",
doi = "10.1109/ICSENS.2007.4388688",
language = "English",
isbn = "1424412617",
series = "Proceedings of IEEE Sensors",
pages = "1456--1459",
booktitle = "The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007",
note = "6th IEEE Conference on SENSORS, IEEE SENSORS 2007 ; Conference date: 28-10-2007 Through 31-10-2007",
}