Design of active region for Watt-level VCSEL at 1060 nm

The active region of high power VCSEL at 1 060 nm is calculated and designed. The performances of highly-strained InGaAs quantum wells with GaAsP, GaAs and AlGaAs barriers are compared. A comprehensive model taking self-heating effect into consideration is presented to determine the parameters of quantum well and barrier. It is found that the best value of width and number of In _0.28Ga _0.72As quantum wells in our design is 9 nm and 3, respectively. And high output power up to Watt-level is achieved. In addition, the temperature performances are also compared among the three different barriers, which show that the devices with GaAsP barriers have higher output power and better temperature stability. Finally, the InGaAs/GaAsP QWs are grown used MOCVD and the PL spectrum is tested, the experimental data agrees with the theoretical results very well.