TY - JOUR
T1 - Design of 808 nm high power diode laser bars
AU - Yang, Ye
AU - Liu, Yun
AU - Qin, Li
AU - Wang, Ye
AU - Liang, Xuemei
AU - Li, Zaijin
AU - Hu, Liming
AU - Shi, Jingjing
AU - Wang, Chao
AU - Wang, Lijun
PY - 2011/1
Y1 - 2011/1
N2 - Laser bars with 808 nm wavelength are designed and fabricated based on GaAs/AlGaAs graded-index waveguide separate confinement hetero structure single quantum well chip. The enhancement in output power, electro-optical conversion efficiency, slope efficiency and spectral properties has been observed in the laser bars with ridge tops and recesses, which can limit the injection current into the active region. The restrictions in lateral diffusion of the current are enhanced with the deepening of the recess, thus improving the electro-optical properties of the bars.
AB - Laser bars with 808 nm wavelength are designed and fabricated based on GaAs/AlGaAs graded-index waveguide separate confinement hetero structure single quantum well chip. The enhancement in output power, electro-optical conversion efficiency, slope efficiency and spectral properties has been observed in the laser bars with ridge tops and recesses, which can limit the injection current into the active region. The restrictions in lateral diffusion of the current are enhanced with the deepening of the recess, thus improving the electro-optical properties of the bars.
KW - Current distribution
KW - Current expansion
KW - Etching depth
KW - Recess
KW - Semiconductor laser bar
UR - https://www.scopus.com/pages/publications/79952348348
U2 - 10.3788/HPLPB20112301.0035
DO - 10.3788/HPLPB20112301.0035
M3 - Article
AN - SCOPUS:79952348348
SN - 1001-4322
VL - 23
SP - 35
EP - 38
JO - Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams
JF - Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams
IS - 1
ER -