Abstract
A SiC MOSFET based 1kV DC-link planarized traction inverter is designed to achieve high power density and high common mode noise immunity of the gate driver. To achieve high power density, a planarized structure is adopted to reduce the overall height of the whole system. Significantly, PCB based busbar, gate driver planar transformer and shunt-based current sensor are the main concepts for planarized inverter design. Moreover, a split gate driver concept is used to shrink the overall size of inverter and reduce driving loop inductance as well. An optimized planar transformer winding layout has been used to reduce the coupling capacitance between primary and secondary side in order to achieve high common mode noise immunity. The inverter is designed for 100kW continuous power and has been tested with a novel closed-loop high power circulating strategy that requires only a small rating DC power supply. Testing results verify the design concepts and the high performance of the traction inverter.
Original language | English |
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Title of host publication | 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 3864-3871 |
Number of pages | 8 |
ISBN (Electronic) | 9781479973118 |
DOIs | |
State | Published - Dec 3 2018 |
Externally published | Yes |
Event | 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 - Portland, United States Duration: Sep 23 2018 → Sep 27 2018 |
Publication series
Name | 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018 |
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Conference
Conference | 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 |
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Country/Territory | United States |
City | Portland |
Period | 09/23/18 → 09/27/18 |
Funding
The information, data, or work presented herein was funded in part by the Office of Energy Efficiency and Renewable Energy (EERE), U.S. Department of Energy, under Award Number DE-EE0006521 with the North Carolina State University, PowerAmerica Institute. This work made use of FREEDM ERC shared facilities supported by NSF under award no. EEC-0812121.
Keywords
- High common mode transient immunity(CMTI)
- High power density
- Low profile
- SiC MOSFET
- Traction inverter