Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications

Gian Franco Dalla Betta, Giovanni Batignani, Mohamed El Amine Benkechkache, Stefano Bettarini, Giulia Casarosa, Daniele Comotti, Lorenzo Fabris, Francesco Forti, Marco Grassi, Saida Latreche-Lassoued, Luca Lodola, Piero Malcovati, Massimo Manghisoni, Roberto Mendicino, Fabio Morsani, Antonio Paladino, Lucio Pancheri, Eugenio Paoloni, Lodovico Ratti, Valerio ReGiuliana Rizzo, Gianluca Traversi, Carla Vacchi, Giovanni Verzellesi, Hesong Xu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We report on the design and TCAD simulations of planar active-edge pixel sensors within the INFN PixFEL project. These devices are intended as one of the building blocks for the assembly of a multilayer, four-side buttable tile for X-ray imaging applications in future Free Electron Laser facilities. The requirements in terms of very wide dynamic range and tolerance to extremely high ionizing radiation doses call for high operation voltages. A comprehensive TCAD simulation study is presented, aimed at the best trade-offs between the minimization of the edge region size and the sensor breakdown voltage.

Original languageEnglish
Title of host publication2014 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479960972
DOIs
StatePublished - Mar 10 2016
Externally publishedYes
EventIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2014 - Seattle, United States
Duration: Nov 8 2014Nov 15 2014

Publication series

Name2014 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2014

Conference

ConferenceIEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2014
Country/TerritoryUnited States
CitySeattle
Period11/8/1411/15/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

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