Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

G. F. Dalla Betta; G. Batignani; M. A. Benkechkache; S. Bettarini; G. Casarosa; D. Comotti; L. Fabris; F. Forti; M. Grassi; S. Latreche; L. Lodola; P. Malcovati; M. Manghisoni; R. Mendicino; F. Morsani; A. Paladino; L. Pancheri; E. Paoloni; L. Ratti; V. Re; G. Rizzo; G. Traversi; C. Vacchi; G. Verzellesi; H. Xu

doi:10.1016/j.nima.2015.08.027

Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

G. F. Dalla Betta, G. Batignani, M. A. Benkechkache, S. Bettarini, G. Casarosa, D. Comotti, L. Fabris, F. Forti, M. Grassi, S. Latreche, L. Lodola, P. Malcovati, M. Manghisoni, R. Mendicino, F. Morsani, A. Paladino, L. Pancheri, E. Paoloni, L. Ratti, V. ReG. Rizzo, G. Traversi, C. Vacchi, G. Verzellesi, H. Xu

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.

Original language	English
Pages (from-to)	384-385
Number of pages	2
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	824
DOIs	https://doi.org/10.1016/j.nima.2015.08.027
State	Published - Jul 11 2016
Externally published	Yes

Funding

The research activity presented in this paper has been carried out in the framework of the PIXFEL experiment funded by Istituto Nazionale di Fisica Nucleare (INFN) .

Funders	Funder number
Instituto Nazionale di Fisica Nucleare

Keywords

Active edges
Breakdown voltage
Silicon detectors
TCAD simulations

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10.1016/j.nima.2015.08.027

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Dalla Betta, G. F., Batignani, G., Benkechkache, M. A., Bettarini, S., Casarosa, G., Comotti, D., Fabris, L., Forti, F., Grassi, M., Latreche, S., Lodola, L., Malcovati, P., Manghisoni, M., Mendicino, R., Morsani, F., Paladino, A., Pancheri, L., Paoloni, E., Ratti, L., ... Xu, H. (2016). Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 824, 384-385. https://doi.org/10.1016/j.nima.2015.08.027

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title = "Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs",

abstract = "We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.",

keywords = "Active edges, Breakdown voltage, Silicon detectors, TCAD simulations",

author = "{Dalla Betta}, {G. F.} and G. Batignani and Benkechkache, {M. A.} and S. Bettarini and G. Casarosa and D. Comotti and L. Fabris and F. Forti and M. Grassi and S. Latreche and L. Lodola and P. Malcovati and M. Manghisoni and R. Mendicino and F. Morsani and A. Paladino and L. Pancheri and E. Paoloni and L. Ratti and V. Re and G. Rizzo and G. Traversi and C. Vacchi and G. Verzellesi and H. Xu",

year = "2016",

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day = "11",

doi = "10.1016/j.nima.2015.08.027",

language = "English",

volume = "824",

pages = "384--385",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

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Dalla Betta, GF, Batignani, G, Benkechkache, MA, Bettarini, S, Casarosa, G, Comotti, D, Fabris, L, Forti, F, Grassi, M, Latreche, S, Lodola, L, Malcovati, P, Manghisoni, M, Mendicino, R, Morsani, F, Paladino, A, Pancheri, L, Paoloni, E, Ratti, L, Re, V, Rizzo, G, Traversi, G, Vacchi, C, Verzellesi, G & Xu, H 2016, 'Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 824, pp. 384-385. https://doi.org/10.1016/j.nima.2015.08.027

Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs. / Dalla Betta, G. F.; Batignani, G.; Benkechkache, M. A. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 824, 11.07.2016, p. 384-385.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

AU - Dalla Betta, G. F.

AU - Batignani, G.

AU - Benkechkache, M. A.

AU - Bettarini, S.

AU - Casarosa, G.

AU - Comotti, D.

AU - Fabris, L.

AU - Forti, F.

AU - Grassi, M.

AU - Latreche, S.

AU - Lodola, L.

AU - Malcovati, P.

AU - Manghisoni, M.

AU - Mendicino, R.

AU - Morsani, F.

AU - Paladino, A.

AU - Pancheri, L.

AU - Paoloni, E.

AU - Ratti, L.

AU - Re, V.

AU - Rizzo, G.

AU - Traversi, G.

AU - Vacchi, C.

AU - Verzellesi, G.

AU - Xu, H.

PY - 2016/7/11

Y1 - 2016/7/11

N2 - We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.

AB - We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.

KW - Active edges

KW - Breakdown voltage

KW - Silicon detectors

KW - TCAD simulations

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DO - 10.1016/j.nima.2015.08.027

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SN - 0168-9002

VL - 824

SP - 384

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Dalla Betta GF, Batignani G, Benkechkache MA, Bettarini S, Casarosa G, Comotti D et al. Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2016 Jul 11;824:384-385. doi: 10.1016/j.nima.2015.08.027

Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

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