Abstract
This paper presents a compact, lightweight, highly efficient, 6.6 kW isolated three-port DC-DC converter for onboard charger (OBC) applications. The converter was designed and fabricated using normally-off gallium nitride (GaN) transistors; a three-dimensional (3-D) printed cold plate; high-voltage heavy copper printed circuit board (PCB) power planes; low-voltage (14 V) and high-current PCB power planes; and a planar transformer. The prototype has a power density of 10.5 kW/L and specific power of 9.6 kW/kg. Test results show greater efficiency than a silicon-based counterpart, even at 2.5 times higher switching frequency. The isolated GaN converter was integrated with a 100 kW segmented traction inverter that uses silicon carbide MOSFETs and 3-D printed components to test the functionality as a level-2 OBC. Testing and evaluation of the integral onboard charging functionality was successfully completed at power levels up to 6.6 kW.
Original language | English |
---|---|
Title of host publication | 2017 IEEE 18th Workshop on Control and Modeling for Power Electronics, COMPEL 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781509053261 |
DOIs | |
State | Published - Aug 18 2017 |
Event | 18th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2017 - Stanford, United States Duration: Jul 9 2017 → Jul 12 2017 |
Publication series
Name | 2017 IEEE 18th Workshop on Control and Modeling for Power Electronics, COMPEL 2017 |
---|
Conference
Conference | 18th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2017 |
---|---|
Country/Territory | United States |
City | Stanford |
Period | 07/9/17 → 07/12/17 |
Funding
Notice: This manuscript has been authored by UT-Battelle, LLC, under Contract No. DE-AC0500OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).
Keywords
- 3D printed heat sink
- gallium nitride (GaN) transistors
- integrated charger
- isolated converter
- onboard charger