Design and Characterization of the BVX: An 8-Channel CMOS Preamplifier-Shaper for Silicon Strips

C. L. Britton; G. T. Alley; M. L. Simpson; A. L. Wintenberg; R. J. Yarema; T. Zimmerman; J. Boissevain; W. Collier; B. V. Jacak; J. Simon-Gillo; W. Sondheim; J. P. Sullivan; N. Lockyer

doi:10.1109/23.281522

Design and Characterization of the BVX: An 8-Channel CMOS Preamplifier-Shaper for Silicon Strips

C. L. Britton, G. T. Alley, M. L. Simpson, A. L. Wintenberg, R. J. Yarema, T. Zimmerman, J. Boissevain, W. Collier, B. V. Jacak, J. Simon-Gillo, W. Sondheim, J. P. Sullivan, N. Lockyer

Sensors and Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This paper presents the design and characterization of an 8-channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20 pF. The nominal peaking time of the circuit is 200 ns with an adjustment range of ±50 ns. The circuit has a pitch (width) of 85µm/channel with a power dissipation of 1.2 mW/channel and has been fabricated in 2 µm p-wells CMOS. The 0 pF noise is 330 e with a noise slope of 64 e/pF. The design approach is presented as well as both test bench and strip detector measurements.

Original language	English
Pages (from-to)	352-355
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	41
Issue number	1
DOIs	https://doi.org/10.1109/23.281522
State	Published - Feb 1994

Funding

Manuscript received October 31, 1992; revised September 28, 1993. Research sponsored by the U.S. Department of Energy. The Oak Ridge National Laboratory is managed by Martin Marietta Energy Systems, Inc. for the US. Department of Energy under contract no. DE-ACO5- 840R21400.

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U.S. Department of Energy

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Britton, C. L., Alley, G. T., Simpson, M. L., Wintenberg, A. L., Yarema, R. J., Zimmerman, T., Boissevain, J., Collier, W., Jacak, B. V., Simon-Gillo, J., Sondheim, W., Sullivan, J. P., & Lockyer, N. (1994). Design and Characterization of the BVX: An 8-Channel CMOS Preamplifier-Shaper for Silicon Strips. IEEE Transactions on Nuclear Science, 41(1), 352-355. https://doi.org/10.1109/23.281522

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title = "Design and Characterization of the BVX: An 8-Channel CMOS Preamplifier-Shaper for Silicon Strips",

abstract = "This paper presents the design and characterization of an 8-channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20 pF. The nominal peaking time of the circuit is 200 ns with an adjustment range of ±50 ns. The circuit has a pitch (width) of 85µm/channel with a power dissipation of 1.2 mW/channel and has been fabricated in 2 µm p-wells CMOS. The 0 pF noise is 330 e with a noise slope of 64 e/pF. The design approach is presented as well as both test bench and strip detector measurements.",

author = "Britton, {C. L.} and Alley, {G. T.} and Simpson, {M. L.} and Wintenberg, {A. L.} and Yarema, {R. J.} and T. Zimmerman and J. Boissevain and W. Collier and Jacak, {B. V.} and J. Simon-Gillo and W. Sondheim and Sullivan, {J. P.} and N. Lockyer",

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Britton, CL, Alley, GT, Simpson, ML, Wintenberg, AL, Yarema, RJ, Zimmerman, T, Boissevain, J, Collier, W, Jacak, BV, Simon-Gillo, J, Sondheim, W, Sullivan, JP & Lockyer, N 1994, 'Design and Characterization of the BVX: An 8-Channel CMOS Preamplifier-Shaper for Silicon Strips', IEEE Transactions on Nuclear Science, vol. 41, no. 1, pp. 352-355. https://doi.org/10.1109/23.281522

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T2 - An 8-Channel CMOS Preamplifier-Shaper for Silicon Strips

AU - Britton, C. L.

AU - Alley, G. T.

AU - Simpson, M. L.

AU - Wintenberg, A. L.

AU - Yarema, R. J.

AU - Zimmerman, T.

AU - Boissevain, J.

AU - Collier, W.

AU - Jacak, B. V.

AU - Simon-Gillo, J.

AU - Sondheim, W.

AU - Sullivan, J. P.

AU - Lockyer, N.

PY - 1994/2

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N2 - This paper presents the design and characterization of an 8-channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20 pF. The nominal peaking time of the circuit is 200 ns with an adjustment range of ±50 ns. The circuit has a pitch (width) of 85µm/channel with a power dissipation of 1.2 mW/channel and has been fabricated in 2 µm p-wells CMOS. The 0 pF noise is 330 e with a noise slope of 64 e/pF. The design approach is presented as well as both test bench and strip detector measurements.

AB - This paper presents the design and characterization of an 8-channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20 pF. The nominal peaking time of the circuit is 200 ns with an adjustment range of ±50 ns. The circuit has a pitch (width) of 85µm/channel with a power dissipation of 1.2 mW/channel and has been fabricated in 2 µm p-wells CMOS. The 0 pF noise is 330 e with a noise slope of 64 e/pF. The design approach is presented as well as both test bench and strip detector measurements.

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JO - IEEE Transactions on Nuclear Science

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Design and Characterization of the BVX: An 8-Channel CMOS Preamplifier-Shaper for Silicon Strips

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